Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

Cabrera, Wilfredo; Brennan, Barry; Dong, Hong; O’Regan, Terrance; Povey, Ian M.; Monaghan, Scott; O’Connor, Eileen; Hurley, Paul K.; Wallace, Robert M.; Chabal, Yves J.

doi:10.1063/1.4860960

Cited by 25 publications

(34 citation statements)

References 31 publications

(46 reference statements)

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“…Similar XPS data were reported by Cabrera et al 10 This result indicates that a hydrogen based reducing ambient during anneal does not prevent indium out-diffusion in Al 2 O 3 /InGaAs gate stacks. At the same time, we have observed a major difference between the two "neutral" annealing ambient conditions, N 2 and vacuum.…”

supporting

confidence: 92%

“…[7][8][9] Cabrera et al proposed that InGaAs related oxides at the dielectric/InGaAs interface layer are the source for this process. 10 Krylov et al correlated the presence of out-diffused indium in the dielectric layer with the increase of gate leakage current. 7 Since the PDA procedure is required for implanted dopant activation, 11 elimination of radiation damage induced during gate metal deposition, 12 and defect passivation in the bulk and interface, [13][14][15] it is highly desirable to suppress this out-diffusion process.…”

mentioning

confidence: 98%

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Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Krylov

Winter

Ritter

et al. 2014

Applied Physics Letters

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confidence: 92%

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confidence: 98%

Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Krylov

Winter

Ritter

et al. 2014

Applied Physics Letters

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“…42 Also, there is plentiful evidence of In transport across various insulating oxides ALD-grown on different In-containing substrates as revealed by several composition-sensitive techniques. [43][44][45][46][47] Therefore, our results concerning the impact of In on electronic properties of insulating Al 2 O 3 may also be relevant to other In-containing material systems.…”

Section: Resultsmentioning

confidence: 95%

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Chou

O’Connor

O׳Mahony

et al. 2016

Journal of Applied Physics

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Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al 2 O 3 / metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al 2 O 3 lead to the development of %0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 6 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al 2 O 3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al 2 O 3 interface of 3.1 6 0.1 eV and 2.5 6 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0-2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection.Published by AIP Publishing.[http://dx

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“…(56)(57)(58)(59)(60) With this instrument, we have investigated indium diffusion by examining the top surface layer of an HfO 2 /In 0.53 Ga 0.47 As sample before and after receiving a post deposition anneal in FGA. (61) In this study 5 keV Ne + ions was used to increase the mass resolution of the heavier atoms as shown in Figure 4. Prior to annealing, an intense arsenic signal is observed at the surface after ALD of HfO 2 .…”

Section: Diffusion Of Iii-v Elements Through High-kmentioning

confidence: 99%

Chemical Nature and Control of High-k Dielectric/III-V Interfaces

Cabrera

Chabal

2015

ECS Trans.

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A number of surface treatments and deposition techniques have been developed to control the interface of high-k/III-V semiconductor gate stacks, which is critical to III-V-based device performance. While electrical measurements have demonstrated the value of these specific processes, there has been little work on the chemical composition of III-V surfaces and interfaces. Using primarily infrared absorption spectroscopy, we have focused on two aspects associated with oxide growth processing: 1) chemical passivation of the interface with monolayer engineering, and 2) barrier for III-V elemental diffusion. We find for example that incorporation of silicon layer by gas phase processing prior to atomic layer deposition of Al 2 O 3 on an oxidized InP surface is effective in reducing an interface layer, composed of dative P=O•••Al and covalent P-O-Al bonds. However, such barriers are not as effective in preventing indium diffusion through high-k dielectrics either during ALD growth or upon post-annealing.

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Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

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Cited by 25 publications

References 31 publications

Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Chemical Nature and Control of High-k Dielectric/III-V Interfaces

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