Diffusion of hydroxyl groups in silica glass through the binding interface

Sato, Noriko; Yamamoto, Toshiyoshi; Kuzuu, Nobu; Horikoshi, Hideharu; Niwa, Shohei

doi:10.7567/jjap.55.02bc13

Cited by 4 publications

(24 citation statements)

References 26 publications

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“…(2). 28) The temperature dependence of the proportionality coefficient κ between the hydroxyl concentration and the diffusion coefficient showed that the value of κ at 1150 °C was larger than that extrapolated from the data at lower temperatures. 28) We considered that this "singularity" may be correlated to the glass transition because 1150 °C is the near the glass transition point observed by light scattering.…”

Section: Introductionmentioning

confidence: 90%

“…28) The temperature dependence of the proportionality coefficient κ between the hydroxyl concentration and the diffusion coefficient showed that the value of κ at 1150 °C was larger than that extrapolated from the data at lower temperatures. 28) We considered that this "singularity" may be correlated to the glass transition because 1150 °C is the near the glass transition point observed by light scattering. 30) However, the possibility that this "singularity" only originates from the experimental error cannot be ruled out because of the insufficient numbers of temperatures and heat treatment times in the measurement to rule out this possibility.…”

Section: Introductionmentioning

confidence: 90%

“…Then, the following are confirmed. (i) In the previous paper, 28) we showed experimentally that the hydroxyl diffusion constant is proportional to the hydroxyl concentration as in Eq. (3).…”

Section: Introductionmentioning

confidence: 91%

“…Then, we improved the measurement as follows: 28) the effect of focusing by changing the Cassegrain mirror with 16× magnification to one with 10× magnification, setting the focus of the measurement beam at the center of the two facing surfaces instead of on one surface, and setting a slittype aperture in the path of the incident beam. As a result, the estimated error of the diffusion coefficient became ≲4%.…”

Section: Introductionmentioning

confidence: 99%

“…Under these conditions, we measured the change in the hydroxyl distribution during the binding of silica glasses with hydroxyl concentrations of 1200 and 130 wt ppm by heat treatment for a long time in the temperature range of 900-1150 °C. 28) We tried to fit our results to the solution of the diffusion equation assuming a constant diffusion coefficient. The theoretical curve did not fit the experimental data perfectly.…”

Section: Introductionmentioning

confidence: 99%

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Temperature and hydroxyl concentration dependences of diffusion coefficients of hydroxyl groups in vitreous silica at temperatures of 850–1200 °C

Kuzuu

Sato

Arakawa

et al. 2017

Jpn. J. Appl. Phys.

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The hydroxyl concentration and temperature dependences of the diffusion coefficients of hydroxyl groups in vitreous silica were investigated by analyzing the change in the hydroxyl concentration distribution caused by heat treatment around the binding interface between silica glass plates with different hydroxyl concentrations. We confirmed experimentally that the diffusion coefficient is proportional to the hydroxyl concentration, which had been predicted theoretically, and obtained the empirical formula D(cOH) = [(4.9 ± 1.0) × 10−14 m2/s·wt ppm] × exp[−(8.1 ± 0.3) × 103 K/T] cOH with the hydroxyl concentration cOH and the absolute temperature T, which is valid at least in the temperature range of 850–1200 °C. Using the values calculated using this formula, we can reproduce the hydroxyl concentration profile after diffusion from a silica glass surface induced by heating in a water vapor atmosphere in the literature, which supports the validity of the empirical formula obtained in this study. The relationship between the effective diffusion coefficient in the literature and our result is discussed.

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature and hydroxyl concentration dependences of diffusion coefficients of hydroxyl groups in vitreous silica at temperatures of 850–1200 °C

Kuzuu

Sato

Arakawa

et al. 2017

Jpn. J. Appl. Phys.

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Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

Ryan

Morin

Madan

et al. 2016

Journal of Applied Physics

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Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

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Promoting vitreous silica devitrification by placement on a NaCl grain at 800 °C–1150 °C

Horii

Kuzuu

Horikoshi

2021

Jpn. J. Appl. Phys.

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This study investigated devitrification of a silica glass substrate put on a NaCl grain heated at temperatures of 800 °C–1150 °C. The devitrified areas are concentric double circles with respective diameters of ca. 1.5 and 1 cm. Devitrification was especially eminent in the area within the inner circle. No change in diameter of outer and inner circles was observed, at least for heating times of 10–480 min. Only the depth of the region within the inner circle increased concomitantly with increasing heating time. No marked difference was found among silica glass species with different amounts of OH and oxygen-deficient silica glasses. The heating temperature depth-dependence characteristics of the center and inner circular region at a heating time of 8 h were compared. The depth of the center of the circular region increased linearly at temperatures greater than about 1000 °C. No temperature dependence was observed at temperatures less than about 900 °C. Devitrification did not proceed under vacuum. The circular region showed alkalinity. Based on these findings, we proposed a model to elucidate the devitrification mechanism.

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Diffusion of hydroxyl groups in silica glass through the binding interface

Cited by 4 publications

References 26 publications

Temperature and hydroxyl concentration dependences of diffusion coefficients of hydroxyl groups in vitreous silica at temperatures of 850–1200 °C

Temperature and hydroxyl concentration dependences of diffusion coefficients of hydroxyl groups in vitreous silica at temperatures of 850–1200 °C

Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

Promoting vitreous silica devitrification by placement on a NaCl grain at 800 °C–1150 °C

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