2006
DOI: 10.1016/j.jnucmat.2006.02.015
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Diffusion of He interstitials in grain boundaries in α-Fe

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Cited by 92 publications
(67 citation statements)
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References 19 publications
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“…Kurtz and Heinisch also found that the maximum He binding energy increases linearly with the grain boundary excess free volume, similar to prior work in fcc nickel. 59 In subsequent studies, Gao, Heinisch, and Kurtz 49 found a relationship between the maximum binding energy and grain boundary energy as well. Additionally, Gao et al started to detail the diffusion trajectories of interstitial and substitutional He atoms along a R3 and R11 grain boundary and found that the dimensionality of migration of interstitial He may depend on temperature (e.g., in the R3(112) boundary).…”
Section: Introductionmentioning
confidence: 90%
See 1 more Smart Citation
“…Kurtz and Heinisch also found that the maximum He binding energy increases linearly with the grain boundary excess free volume, similar to prior work in fcc nickel. 59 In subsequent studies, Gao, Heinisch, and Kurtz 49 found a relationship between the maximum binding energy and grain boundary energy as well. Additionally, Gao et al started to detail the diffusion trajectories of interstitial and substitutional He atoms along a R3 and R11 grain boundary and found that the dimensionality of migration of interstitial He may depend on temperature (e.g., in the R3(112) boundary).…”
Section: Introductionmentioning
confidence: 90%
“…[40][41][42][43][44][45][46][47] Despite this fact, there have been relatively few studies that have focused on He interactions with grain boundaries. [48][49][50][51][52][53][54][55][56][57][58] These prior works have been significant for understanding the migration paths and mechanisms of He for a few boundaries using the dimer method, 49,51 understanding migration of interstitial He in different grain boundaries using molecular dynamics, 52 understanding how the grain boundary strength is affected by He 53,54 or He bubbles, 55 or understanding the diffusion and stability of He defects in grain boundaries using first principles. 56,57 For instance, Kurtz and Heinisch 48 used a Finnis-Sinclair potential (detailed in Morishita et al 14 ) to show that interstitial He was more strongly bound to the grain boundary core than substitutional He.…”
Section: Introductionmentioning
confidence: 99%
“…For example, motion of He interstitials in GB of iron has been investigated by Gao and coworkers. 141 A series of MD simulation shows that the maximum binding energy for substitutional/interstitial He atoms and the GB are highly correlated. By¯nding the activation energy of He atoms during di®usion, He interstitials are mobile in the GB.…”
Section: Grain Boundariesmentioning
confidence: 99%
“…The radiation tolerance of nanocrystalline materials strongly depends on the diffusion, segregation, and annihilation of SIAs and vacancies near the grain boundary. The fundamental processes have been extensively studied by atomistic simulations to examine the interaction of defects with grain boundary at the nanoscale [19][20][21][22][23]. Samaras et al [19] conducted molecular dynamics (MD) simulation in nanocrystalline Ni to study the movement of collision cascade induced SIAs and their annihilation at the grain boundary.…”
Section: Introductionmentioning
confidence: 99%