Diffusion of Ga adatoms at the surface of GaAs(001)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo><mml:mi>α</mml:mi></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>reconstructions

Mińkowski, Marcin; Załuska‐Kotur, Magdalena A.

doi:10.1103/physrevb.91.075411

Cited by 7 publications

(9 citation statements)

References 51 publications

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“…So far mostly strictly theoretical systems have been considered. However, recently we have succesfully applied the variational approach to the diffusion of a single Ga adatom on the GaAs(001) surface c(4x4) α and β reconstructions [33] using the energy landscapes from Refs. [34] and [35].…”

Section: Calculation Of Diffusion Coefficientsmentioning

confidence: 99%

Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces

Mińkowski

Załuska‐Kotur

2015

Surface Science

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Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces is analyzed basing on ab-initio surface potentials. As compared to the simple single adatom jumps that alternate between two states, dimers undergo more complex diffusion process that combines translational and rotational moves. Diffusion coefficients for these processes on both surfaces are calculated and compared with diffusion of single particle. The main parameters of diffusion coefficient: energy barrier and prefactor become temperature dependent when dimer moves jumping between many positions of different values of energy. Small difference in the surface lattice constant for Cu and Ag crystal results in completely different energy landscape for dimer jumps and as an effect different diffusion process. At the same time single adatom diffusion does not change so much

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Section: Calculation Of Diffusion Coefficientsmentioning

confidence: 99%

Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces

Mińkowski

Załuska‐Kotur

2015

Surface Science

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“…Next we use the presented method to calculate density dependence of the diffusion on GaAs surface, studied before in Ref. 31. We show that the diffusion anisotropy at this surface can be induced by the presence of other particles.…”

Section: Introductionmentioning

confidence: 89%

“…which is the variational formula used by us to solve various diffusional problems [26][27][28][29][30][31][32][33][34] . M ( k) and N ( k) have been referred to as the expectation value numerator and the normalization denominator, respectively.…”

Section: B Variational Approachmentioning

confidence: 99%

“…Among common simulation approaches to diusion problems are Monte Carlo and molecular dynamics, while analytical methods are based for example on Fokker-Planck, Kramers or master equation . Many studies have been devoted to the problems of diusion over concrete crystal surfaces of complex energetic landscape [24][25][26][27][28]. In such case description of single-particle diusion already is a dicult task and the presence of many particles increases only the degree of complexity.…”

Section: J Stat Mech (2018) 053208mentioning

confidence: 99%

“…. Many studies have been devoted to the problems of diffusion over concrete crystal surfaces of complex energetic landscape 24,25,31,33,34 . In such case description of singleparticle diffusion already is a difficult task and the pres-ence of many particles increases only the degree of complexity.…”

Section: Introductionmentioning

confidence: 99%

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Collective diffusion of dense adsorbate at surfaces of arbitrary geometry

Mińkowski¹,

Załuska‐Kotur²

2018

J. Stat. Mech.

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Convenient variational formula for collective diffusion of many particles adsorbed at lattices of arbitrary geometry is formulated. The approach allows to find the expressions for the diffusion coefficient for any value of the system's coverage. It is assumed that particles interact via onsite repulsion excluding double site occupancy. It is shown that the method can be applied to various systems of different geometry. Examples of real systems such as GaAs with specific energetic landscapes are also presented. Diffusion of Ga adatoms on GaAs(001) surface reconstructed in two different symmetries is studied. It is shown how increasing Ga coverage changes the character of diffusion from isotropic two-dimensional into highly anisotropic, almost one-dimensional. It is shown how important the role of the inter-particle correlations is, which influence the value of the collective diffusion coefficient at higher coverages.PACS numbers:

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Growth far from equilibrium: Examples from III-V semiconductors

Kuech

Babcock

Mawst

2016

Applied Physics Reviews

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The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs1−yBiy system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

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Diffusion of Ga adatoms at the surface of GaAs(001)c(4×4)αandβreconstructions

Cited by 7 publications

References 51 publications

Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces

Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces

Collective diffusion of dense adsorbate at surfaces of arbitrary geometry

Growth far from equilibrium: Examples from III-V semiconductors

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