Abstract:We have investigated theoretically and experimentally the impurity-free vacancy induced disordering for GaAs/AlGaAs double quantum well laser structure grown by MBE with capped SiO2 by repid thermal annealing. The position of the photoluminescence peaks, due to the n=1 electron to heavy-hole transition, was measured before and after annealing the samples. As a result, the samples annealed rapidly show blue shift in the position of photoluminescence peaks and the magnitude of shift increases with increasing tem… Show more
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