2011
DOI: 10.1039/c0jm02212h
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Diffusion of Al, O, Pt, Hf, and Y atoms on α-Al2O3(0001): implications for the role of alloying elements in thermal barrier coatings

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Cited by 43 publications
(23 citation statements)
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“…In spite of many studies about the defects 13-20 and defect diffusion [21][22][23][24][25][26] in Al 2 O 3 , V O diffusion in Al 2 O 3 has been remained as a discrepancy. The calculated V O diffusion energies by theoretical approaches are the order of 1-2.5 eV.…”
mentioning
confidence: 89%
“…In spite of many studies about the defects 13-20 and defect diffusion [21][22][23][24][25][26] in Al 2 O 3 , V O diffusion in Al 2 O 3 has been remained as a discrepancy. The calculated V O diffusion energies by theoretical approaches are the order of 1-2.5 eV.…”
mentioning
confidence: 89%
“…2638 Fewer studies have explored atomic, molecular adhesion and adsorption on the same surfaces 3953 with particular interest in H 2 O adsorption, 27,47,52,54,55 while doping effects were primary of interest of the bulk material due to the changes in the bandgap related properties. 56,57 or dehydroxylation effects.…”
Section: Introductionmentioning
confidence: 99%
“…As a baseline point of comparison for future GB diffusion studies, we chose the basal plane of alumina, i.e., the α-Al 2 O 3 ð0001Þ surface, on which to examine adsorption (30) and diffusion (32) of Al, O, Hf, Y, Pt, and S. The electropositive metals Al, Y, and Hf all adsorb on the same threefold hollow site, namely the site where the next Al ion would be if the bulk crystal continued. This is also the place one would intuitively place an adsorbate that donates electrons.…”
Section: Resultsmentioning
confidence: 99%