Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds
Serge D. Koumetz
Abstract:This research shows that the diffusion of grown-in and implanted Be atoms in III-V considered semiconductor materials, taking place during the RTA process, is perfectly well explained by the “full” version of the kick-out mechanism operating through singly positively ionized Be interstitials and group III self-interstitial ions in all their states of positive charge including neutral. Numerical solutions of the differential equations, corresponding to the considered system of diffusion reactions, have been cal… Show more
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