Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100)

Panda, Debashis; Dhar, A.; Ray, S. K.

doi:10.1039/c5ra00869g

Cited by 2 publications

(2 citation statements)

References 35 publications

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“…In NiGe-Tb samples the peaks Ge 2p3/2 and Ge 3d and Ni 2p show increase in intensities and right shift which attribute to higher binding energy Ge 2p3/2 and Ge 3d core level. In the case of Ni 2p3/2 the peak intensity increase, is due to higher exposed Ni surface area and increase in the nearest Ni-Ni distance due to insertion of Tb as previously reported 37,38 . Also chemical state of Tb in the NiGe-Tb alloy could be +3, +4 corresponding to Tb 4d peak according to pervious studied 39,40 .…”

Section: Resultssupporting

confidence: 82%

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Babu

Lee

Song

et al. 2020

Sci Rep

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by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10 −8 Ω·cm 2 , which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10 −6 Ω·cm 2 . The current-voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

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Section: Resultssupporting

confidence: 82%

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Babu

Lee

Song

et al. 2020

Sci Rep

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“…Alternate application of positive and negative sweeps exclusive of current compliance limitations thus permits for programming the RRAM in two unusual reset states. 26 This can serve for encoding two logic bits in passive crossbar arrays, without any requirement of select device. 14,27 The cycling measurements were repeated by the dc sweep.…”

Section: Resultsmentioning

confidence: 99%

Temperature induced complementary switching in titanium oxide resistive random access memory

2016

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On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

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Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100)

Abstract: Self assembled binary nickel germanide nanorings are formed by annealing of a Ni/Ge/Si (100) film.

Cited by 2 publications

References 35 publications

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Temperature induced complementary switching in titanium oxide resistive random access memory

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