Diffusion in Thin Film Ti–Au, Ti–Pd, and Ti–Pt Couples

Tisone, T. C.; Drobek, J.

doi:10.1116/1.1316577

Cited by 145 publications

(70 citation statements)

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“…3) showed that the density of threading dislocations (labeled "O" and "A" in Fig. 3) was in the order of 5¥10 SIMS showed that the Pt electrodes on the Ti adhesion layers contained Ti, consistent with findings by others [18][19][20]. The influence of Ti underneath (111) textured Pt electrodes on perovskite film texture is well documented [21,22].…”

Section: A Srtio 3 Thin Film Microstructuresupporting

confidence: 73%

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Schmidt

et al. 2005

Journal of Applied Physics

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The factors controlling low frequency (1 MHz) dielectric losses of textured SrTiO 3 thin films deposited by radio-frequency magnetron sputtering on platinized sapphire substrates were investigated. In particular, the influence of film texture, phase transformations, applied bias field, temperature and annealing atmospheres was studied. Films that were (111) textured showed a phase transformation at ~ 150 K, whereas films that were predominantly (110) oriented did not exhibit a phase transformation in the measured temperature range (100 K -300 K). Two major contributions to the dielectric losses were identified: a low temperature loss increase for the (111) oriented film, which could be suppressed by an applied bias field, and a loss peak at 2 50 K (at 1 MHz), which was strongly frequency dependent and likely associated with a relaxing defect. The low temperature loss mode was related to the appearance of a phase transformation and contributed to the dielectric losses even at temperatures that were more than 100 K above the phase transformation. In contrast to the leakage properties of the films, which were strongly dependent on annealing atmospheres, annealing under reducing conditions had no significant influence on any of the observed loss modes. Possible origins of the different loss contributions are discussed.3

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Section: A Srtio 3 Thin Film Microstructuresupporting

confidence: 73%

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Schmidt

et al. 2005

Journal of Applied Physics

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“…19 In this study, we did not investigate the possibility of oxidation of the titanium layer through the gate-insulator SiO 2 . The possibility of this oxidation process was excluded through the analysis of V th difference between sensor FETs and reference FETs.…”

Section: Discussionmentioning

confidence: 99%

A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

Usagawa

Kikuchi

2010

Journal of Applied Physics

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A hydrogen gas sensor based on platinum–titanium–oxygen (Pt–Ti–O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and superheavily oxygen-doped amorphous titanium formed on SiO2/Si substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (ΔVg) defined by the magnitude of the threshold voltage shift. ΔVg is well fitted by a linear function of the logarithm of air-diluted hydrogen concentration C (ppm), i.e., ΔVg(V)=0.355 log C(ppm)−0.610, between 100 ppm and 1%. This high gradient coefficient of ΔVg for the wide sensing range demonstrates that the sensor is suitable for most hydrogen-safety-monitoring sensor systems. The Pt–Ti–O structures of the sensor are typically realized by annealing Pt (15 nm)/Ti (5 nm)-gate Si-metal-oxide-semiconductor structures in air at 400 °C for 2 h. The Pt–Ti–O gate MIS structures were analyzed by transmission electron microscope (TEM), x-ray diffraction, Auger electron spectroscopy, and TEM energy dispersive x-ray spectroscopy. From the viewpoint of practical sensing applications, hydrogen postannealing of the Pt–Ti–O gate Si-MISFETs is necessary to reduce the residual sensing amplitudes with long tailing profiles.

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“…Although it is well-known that Ti diffuses through Pt electrodes [18][19][20][21], the precise mechanisms by which Ti underlayers control perovskite thin film textures are not fully understood. In the literature, it has been suggested that either a Pt-Ti intermetallic or TiO 2 on the Pt surface provide a templating layer for (111) epitaxial perovskite growth [14,17].…”

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confidence: 99%

Atomic structure of (111) SrTiO3∕Pt interfaces

Schmidt

Klenov

Keane

et al. 2006

Applied Physics Letters

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Atomic resolution high-angle annular dark field (HAADF) imaging in scanning transmission electron microscopy was used to investigate the interface atomic structure of epitaxial, (111) oriented SrTiO3 films on epitaxial Pt electrodes grown on (0001) sapphire. The cube-on-cube orientation relationship of SrTiO3 on Pt was promoted by the use of a Ti adhesion layer underneath the Pt electrode. While a Ti-rich Pt surface was observed before SrTiO3 growth, HAADF images showed an atomically abrupt SrTiO3∕Pt interface with no interfacial layers. The SrTiO3 films contained two twin variants that were related by a 180° rotation about the ⟨111⟩ surface normal. HAADF images showed two different interface atomic arrangements for the two twins. The role of Ti in promoting (111) epitaxy and the implications for the dielectric properties are discussed.

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Diffusion in Thin Film Ti–Au, Ti–Pd, and Ti–Pt Couples

Cited by 145 publications

References 0 publications

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

Atomic structure of (111) SrTiO3∕Pt interfaces

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