Diffusion coefficients and activation energies for Zn diffusion into undoped and S-doped InP

Abstract

We present results of open tube Zn diffusion into undoped and S-doped n-type InP over the temperature range 550–675 °C. The process yields reproducible results which are consistent with an interstitial-substitutional diffusion model. For the undoped samples, an activation energy of 1.52 eV and a diffusion constant of 4.9×10−2 cm2/s are obtained. For heavily S-doped samples, values of 2.34 eV and 1.4×103 cm2/s, respectively, result. The difference in activation energy which is comparable to the Fermi level difference in the two substrate types is consistent with the different diffusion mechanisms which occur in these two types of InP.

Stability of Zn doping profile in modulation-doped multiple quantum well structure

“…9. 18,[26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] The value obtained in this work is ten thousand times lower than the reported diffusion coefficient of 6.5ϫ10 Ϫ14 cm 2 /s. 42…”

“…A Zn diffusion coefficient D s at the surface of the doped region is usually calculated based on an interstitial-substitutional mechanism without doping effect for complementary error function. 27,28,48,49 …”

“…21 The often observed high diffusivity of Zn atoms would seem to restrict the possibility of getting abrupt doping profiles. [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] However, doping superlattices ͑so-called nipi structure͒ with Zn as p-type dopant have been successfully fabricated. [22][23][24][25] Furthermore, a small Zn diffusion coefficient of 6.5ϫ10 Ϫ14 cm 2 /s has been reported in the case of unin-tentional diffusion.…”

Can main group systems act as superior catalysts for dihydrogen generation reactions? A computational investigation

“…71,72 Dispersion corrections [73][74][75] using DFT-D3 has been included in all the geometry optimization calculations. The resolution of identity (RI), 77 along with the multipole accelerated resolution of identity (marij) 78 approximations have been employed for an accurate and efficient treatment of the electronic Coulomb term in the DFT calculations. The resolution of identity (RI), 77 along with the multipole accelerated resolution of identity (marij) 78 approximations have been employed for an accurate and efficient treatment of the electronic Coulomb term in the DFT calculations.…”

Diffusion mechanism of Zn in InP and GaP from first principles

“…5 In InP, activation energies of 1.35, 1.40, 1.36, and 1.52 eV have been reported for undoped InP, and 1.28, 2.34, and 2.40 eV in n-type InP. [6][7][8][9][10] In GaP, only one activation energy, of 2.38 eV for n-type GaP, has been reported. 9 Zn diffusion has also been studied in n-type In 1−x Ga x P where the activation energy was found to follow the relation E A ͑x͒ = 1.28+ 2.38x eV ͑although these values compare better to those of undoped materials͒.…”