2004
DOI: 10.1016/j.jallcom.2004.05.028
|View full text |Cite
|
Sign up to set email alerts
|

Diffusion and segregation of arsenic and boron in polysilicon/silicon systems during rapid thermal annealing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2005
2005
2018
2018

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 16 publications
(25 reference statements)
0
1
0
Order By: Relevance
“…Recently, boron-doped microcrystalline silicon and microcrystalline Si-based alloys have attracted a great deal of attention due to their potential application as a window layer of microcrystalline silicon-based p-i-n junction solar cells [1][2][3][4][5][6][7]. Compared to B-doped amorphous Si, this material has a higher dark conductivity, carrier mobility, doping efficiency, optical transparency, etc., due to the presence of Si crystallites embedded in the amorphous Si or Si-based matrices [8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, boron-doped microcrystalline silicon and microcrystalline Si-based alloys have attracted a great deal of attention due to their potential application as a window layer of microcrystalline silicon-based p-i-n junction solar cells [1][2][3][4][5][6][7]. Compared to B-doped amorphous Si, this material has a higher dark conductivity, carrier mobility, doping efficiency, optical transparency, etc., due to the presence of Si crystallites embedded in the amorphous Si or Si-based matrices [8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%