Diffusion and recrystallization processes during annealing of N+- and P+-implanted LiNbO3

Abstract

The stability of ion irradiation induced defects and refractive index changes in LiNbO3, is examined in the temperature region 300 K ≦ TA ≦ 1370 K using the results of RBS, volume expansion, and reflection measurements. Due to the destruction of the crystal structure the activation energy of the Li2O‐diffusion in RBS‐amorphous layers is reduced to (0.62 ±; 0.07) eV. Thereby at temperatures TA > 700 K a mixed phase of LiNbO3 and LiNb3O8, can be formed. The restoration of the LiNbO3 crystal structure takes place in connection with the equalization of the Li2O‐concentration by diffusion from the substrate into the layer during annealing at TA = 1370 K.

Precipitation kinetics of LiNbO3 and LiNb3O8 crystalline phases in thermally annealed amorphous LiNbO3 thin films

“…There has been debate about the mechanism responsible for pyrochlore phase formation in bulk crystal. The central issue is whether LiNb 3 O 8 is formed in the bulk as a result of the phase separation of Li 1 -x Nb 1 + y O 3 into LiNbO 3 and LiNb 3 O 8 [6][7][8], or at the surface as a result of Li 2 O loss from the crystal [4,9]. The precipitation of a greater volume of LiNb 3 O 8 , when an a-LN film was annealed in an O 2 ambient (Fig.…”

Unveiling the Defect Structure of Lithium Niobate with Nuclear Methods

“…Jentschke and Hehl [107] studied the influence of annealing procedures in air on the implantation induced by in P + (250 keV) and N + (150 keV) implanted LN. For the case of a partial damaged (5 × 10 14 N + cm −2 ) x-cut sample, a virtually complete recovery of the lattice was achieved after annealing at 300 • C for 30 min.…”