Diffusion and Quenching of Metastable Xe Atoms in Mixtures of Xe and Rare Gases

Tachibana, Kunihide; Takahashi, Kazuo; Matsuzaki, Hideomi; Sakai, Tetsuo

doi:10.1143/jjap.33.6716

Cited by 9 publications

(10 citation statements)

References 4 publications

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“…This is most probably related to the higher concentration of radicals produced in the atmospheric pressure discharge, e.g. 10 15 cm −3 of H atoms and 10 13 cm −3 of SiH 3 [57][58][59]. The increased radical pool should lead to higher abstraction rates of hydrogen from the film surface [60][61][62].…”

Section: Discussionmentioning

confidence: 99%

Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure

Moravej

Babayan

Nowling

et al. 2003

Plasma Sources Sci. Technol.

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Amorphous hydrogenated silicon films were grown using an atmospheric pressure helium and hydrogen plasma with silane added downstream of the source. A maximum deposition rate of 120 ± 12 Å min −1 was recorded at a substrate temperature of 450˚C, 6.3 Torr H 2 , 0.3 Torr SiH 4 , 778 Torr He, 32.8 W cm −3 , and an electrode-to-substrate spacing of 6.0 mm. The deposition rate increased rapidly with the silane and hydrogen partial pressures, up to 0.1 and 7.0 Torr, respectively, then remained constant thereafter. By contrast, the deposition rate decreased exponentially as the electrode-to-substrate distance was increased from 5.0 to 10.5 mm. The total hydrogen content of the films ranged from 2.5 to 8.0 ± 1.0 at%. These results together with a model of the plasma chemistry indicate that H atoms and SiH 3 radicals play an important role in the deposition process.

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Section: Discussionmentioning

confidence: 99%

Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure

Moravej

Babayan

Nowling

et al. 2003

Plasma Sources Sci. Technol.

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“…In the case of using CH 4 as a carbon source gas, CH 3 radicals are effectively generated in the parallel-plate rf CCP at a pressure of approximately 100 mTorr. 20,21) Moreover, the synthesis of CNWs was also reported using microwave PECVD with the CH 4 /H 2 system at a pressure of more than 1 Torr. 7,22) An amount of C 2 radicals on the order of 10 12 cm À3 would exist in microwave PECVD with the CH 4 /H 2 system at moderate pressure from 10 to 100 Torr.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of Carbon Nanowalls Using Novel Plasma Processing

Hiramatsu

Hori

2006

jjap

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Carbon nanowalls (CNWs), i.e., two-dimensional carbon nanostructures, were fabricated using fluorocarbon capacitively coupled plasma-enhanced chemical vapor deposition assisted by H radical injection. The correlation between CNW growth and the fabrication conditions was investigated. The morphologies of CNWs were dependent on the types of carbon source gases and the amount of H radicals injected. Moreover, straight and aligned CNWs with regular spacing were fabricated on the substrate set perpendicular to the electrode. In addition, H and CFx (x=1–3) radical densities in the plasma were measured using vacuum ultraviolet absorption spectroscopy and appearance mass spectrometry, respectively, to clarify the growth mechanism of CNWs. The density ratio of H radicals to CFx radicals was found to be an important factor responsible for the formation of CNWs from fluorocarbon/hydrogen systems and increased drastically as a result of H radical injection.

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“…The rates of the excitation and de-excitation are listed in table 1. The diffusion coefficients for the metastable atoms are D Xe m N = 5.1 × 10 18 cm −1 s −1 [27] and D He m N = 1.45 × 10 19 cm −1 s −1 [28]. The effective transition probabilities A sm = 3.12 × 10 7 s −1 , A sr = 2.58 × 10 6 s −1 , A pm = 1.51 × 10 7 s −1 , A pr = 2.12×10 7 s −1 were calculated using the natural lifetimes for individual levels [29].…”

Section: Balance Equations For Excited Atomsmentioning

confidence: 99%

Investigation of a low-pressure He–Xe discharge in spot mode

Porokhova¹,

Winter²,

Sigeneger³

et al. 2008

Plasma Sources Sci. Technol.

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One of the promising candidates for new mercury-free lamps is a low-pressure discharge in a helium-xenon mixture. This discharge with a hot spot on an oxide cathode has been investigated in dc mode. The temperatures of the gas and the cathode surface in the spot vicinity have been measured and used as input parameters for a two-dimensional fluid modelling of the discharge. The model is based on the particle balance equations for the charged particles and excited atoms, Poisson's equation, the energy balance equation for the electrons and a lookup table for the electron transport coefficients and collision rate coefficients determined from a kinetic treatment. The spatial density profiles of the xenon metastable and resonance atoms in front of the spot obtained from the modelling are compared with those measured by laser absorption techniques. The charged particle densities and fluxes in the cathode region and on the cathode surface are discussed.

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Diffusion and Quenching of Metastable Xe Atoms in Mixtures of Xe and Rare Gases

Cited by 9 publications

References 4 publications

Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure

Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure

Fabrication of Carbon Nanowalls Using Novel Plasma Processing

Investigation of a low-pressure He–Xe discharge in spot mode

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