Diffuse scattering and superstructure reflections from In1−y(AlxGa1−x)yP

Abstract

The structure of In1−y (Alx Ga1−x )y P semiconductor alloy systems was studied by electron diffraction. Varied distribution of diffuse scattering and superstructure reflections was observed. The pertinent ordered structure is dependent on growth parameters, but not on the alloy systems. The diffuse scattering could be attributed to mean square atomic displacements due to the coexistence of different column III atoms in the same sublattice.

Structural and optical properties of GaxIn1−xP layers grown by chemical beam epitaxy

“…Yasuami et al 10 investigating OMVPE GaInP layers showed diffuse scattering at ~ 1 2 { 110} positions in a GaInP layer grown at 650°C. 2a and 2b.…”

“…1,2 The successful growth of 0.98 µm lasers using GaInP cladding layers has been achieved by chemical beam epitaxy (CBE), 3 although the alloy layers have been commonly grown by organometallic vapor phase epitaxy (OMVPE). [5][6][7][8][9][10][11][12][13][14][15][16] Energy calculations have predicted that the CuPt-type ordering can result in a significant reduction in the bandgap energy 17 and experimental measurements have shown this to be the case for OMVPE GaInP and GaInAs layers. [5][6][7][8][9][10][11][12][13][14][15][16] Energy calculations have predicted that the CuPt-type ordering can result in a significant reduction in the bandgap energy 17 and experimental measurements have shown this to be the case for OMVPE GaInP and GaInAs layers.…”

“…McDermott et al 7 used photoluminescence (PL) and transmission electron microscopy (TEM) to investigate ordering in GaInP layers grown by atomic layer epitaxy (ALE). Although TEM has been widely used to investigate ordering in OMVPE GaInP (001) layers, 5,8,10,12,[14][15][16] there is a lack of detailed microstructural characterization of GaInP (001) layers grown by CBE. Although TEM has been widely used to investigate ordering in OMVPE GaInP (001) layers, 5,8,10,12,[14][15][16] there is a lack of detailed microstructural characterization of GaInP (001) layers grown by CBE.…”

Diffuse X-ray scattering study of sublattice ordering among Group III atoms in In0.5Ga0.5P and In0.5Al0.5P

“…Samples used in this study were essentially the same as those used in previous work (Yasuami, Nozaki & Ohba, 1988;Nozaki, Ohba, Sugawara, Yasuami & Nakanisi, 1988). Ino.sGao.sP and Ino.sAlo.sP, expitaxic layers were grown by OMVPE on (001) GaAs substrates.…”

“…1987), InxGal-~,P (Gomyo, Suzuki, Kobayashi, Kawata, Hino & Yuasa, 1987;Ueda, Takikawa, Komeno & Umebu, 1987;Bellon, Chevalier, Martin, Dupont-Nivet, Thiebaut & Andr6, 1988;McKernan, DeCooman, Carter, Bour & Shealy, 1988;Gomyo, Suzuki & Iijima, 1988;Dabkowski, Gavrilovic, Meehan, Stutius, Williams, Shahid & Mahajan, 1988;Kondow, Kakibayashi & Minagawa, 1988) and Inx(Ga~.All-y)l-~P (Yasuami, Nozaki & Ohba, 1988;Gavrilovic, Dabkowski, Meehan, Williams, Stutius, Hsieh, Holonyak, Shahid & Mahajan, 1988). The investigation of Inx(GayAll_y)l_xP grown on a (001) GaAs substrate by OMVPE was motivated by reports of an unexpected bandgap variation which depends on the growth temperature and the V/III molar ratio in the gas composition (Ohba, Ishikawa, Sugawara, Yamamoto & Nakanisi, 1986;Gomyo, Kobayashi, Kawata, Hino, Suzuki & Yuasa, 1986 (Suzuki, Gomyo & Iijima, 1988;Bellon, Chevalier, Augarde, Andr6 & Martin, 1989).…”