2010
DOI: 10.1103/physrevb.81.161401
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Diffuse-interface model for nanopatterning induced by self-sustained ion-etch masking

Abstract: We construct a simple phenomenological diffuse-interface model for composition-induced nanopatterning during ion sputtering of alloys. In simulations, this model reproduces without difficulties the high-aspect ratio structures and tilted pillars observed in experiments. We investigate the time evolution of the pillar height, both by simulations and by in situ ellipsometry. The analysis of the simulation results yields a good understanding of the transitions between different growth regimes and supports the rol… Show more

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Cited by 48 publications
(20 citation statements)
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“…2(c)), indicating that the height of the nanodots increases with sputtering time, in agreement with the experimental results of Ref. 26.…”
Section: Resultssupporting
confidence: 91%
“…2(c)), indicating that the height of the nanodots increases with sputtering time, in agreement with the experimental results of Ref. 26.…”
Section: Resultssupporting
confidence: 91%
“…Le Roy et al have argued that phase separation is responsible for the formation of nanodots on GaSb [25,26]. In their view, preferential sputtering of antimony leads to segregated regions of gallium at the surface of the solid; these in turn shield the underlying gallium antimonide from the incident ions, leading to the development of cones with gallium dots at their apices.…”
Section: Introductionmentioning
confidence: 99%
“…It is unclear whether the surface really is enriched in gallium, however [1,27]. Moreover, the simulations of Le Roy and co-workers were confined to two dimensions [26], and so it is not currently known whether or not their model leads to orderly arrays of nanodots in three dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…Ion-induced segregation explains the nanopatterning process on GaSb. 32 However, in our case, iron silicide has a negative formation enthalpy with respect to Si or Fe simple substance, 33 which implies a tendency of Si-Fe integration for a lower surface energy. Therefore, ion-induced segregation is not applicable here.…”
Section: B Pattern Decaying During Postsputtering Without Fe Incorpomentioning
confidence: 96%