For achieving high-efficiency
perovskite solar cells, it is almost
always necessary to substantially passivate defects and protect the
perovskite structure at its interfaces with charge transport layers.
Such a modification generally involves the post-treatment of the deposited
perovskite film by spin coating, which cannot meet the technical demands
of scaling up the production of perovskite photovoltaics. In this
work, we demonstrate one-step construction of buried and capped double
1D/3D heterojunctions without the need for any post-treatment, which
is achieved through facile tetraethylammonium trifluoroacetate (TEATFA)
prefunctionalization on the SnO
2
substrate. The functional
TEATFA salt is first deposited onto the SnO
2
substrate
and reacts on this buried interface. Once the FAPbI
3
perovskite
precursor solution is dripped, a portion of the TEA
+
cations
spontaneously diffuse to the top surface over film crystallization.
The TEATFA-based water-resistant 1D/3D TEAPbI
3
/FAPbI
3
heterojunctions at both the buried and capped interfaces
lead to much better photovoltaic performance and higher operational
stability. Since this approach saves the need for any postsynthesis
passivation, its feasibility for the fabrication of large-area perovskite
photovoltaics is also showcased. Compared to ∼15% for a pristine
5 cm × 5 cm FAPbI
3
mini-module without postsynthesis
passivation, over 20% efficiency is achieved following the proposed
route, demonstrating its great potential for larger-scale fabrication
with fewer processing steps.