Differential Signal Balancer Embedded in Metal Wiring Layers of Silicon LSI

Kameya, Masaaki; Yang-Min, C.; Nakamura, K.

doi:10.7567/ssdm.2019.m-3-05

Cited by 1 publication

(3 citation statements)

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“…In addition, it has superior characteristics; (1) absorbing noise in wide frequency range, (2) scattering the reflected noise in time domain, and (3) capability for the higher data rates exceeding 16 Gb s −1 . [14][15][16][17][18] Since DSB has been constructed using the multi-layer structure of low temperature co-fired ceramic (DSB-LTCC), its complex structure and the manufacturing cost are obstacles to utilize the DSB to the wide range of applications.…”

Section: Introductionmentioning

confidence: 99%

“…To solve this problem, we have developed a DSB embedded in metal wiring layers (DSB-EIM) on a silicon LSI Chip. 18) There are reports of realization simple LC filters, or study of spiral inductors on semiconductor chip. [19][20][21][22][23][24][25][26][27] An experimental CMC without the magnetic material on porous silicon substrate is also reported.…”

Section: Introductionmentioning

confidence: 99%

“…As the extensions of the previous report, this paper includes the detail of the design of the DSB-EIM and the verification of the availability for the ultra-high-speed differential signal transmission using the precise circuit simulation using the measured S-parameters. 18) This paper consists of the following sections. In Sect.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Compact differential signal balancer embedded in metal wiring layers of silicon LSI for common mode noise filtering

Kameya¹,

Chang²,

Gofuku³

et al. 2020

Jpn. J. Appl. Phys.

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The differential signal balancer (DSB) is a discrete common mode filter component using a low temperature co-fired ceramic (LTCC) process in which non-magnetic materials are employed. In this paper, we have developed the new DSB embedded in metal wiring layers of silicon LSI for achieving the multiple ultra-high-speed differential transmission exceeding 10 Gb s−1 between LSIs. While the spiral inductors in the silicon CMOS process are affected by the substrate loss and conductor resistance with the thinner thicknesses for both metal and dielectric layers, its lumped circuit parameters are optimized well, and the obtained characteristics are almost comparable with that of the conventional DSB using LTCC. It has approximately −10 dB attenuation of common mode noise at 2.4 GHz with very small size of 120 μm × 250 μm and volume size of about 1/6000 compared to the conventional DSB.

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Section: Introductionmentioning

confidence: 99%