Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

Nemouchi, F.; Mangelinck, Dominique; Bergman, C.; Gas, P.; Smith, Ulf

doi:10.1063/1.1852727

Cited by 68 publications

(85 citation statements)

References 9 publications

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“…The exponent n is determined using the form given below. This indicates the system has access to cluster size distributions at temperatures less than P T and slower heating rates would lead to increase in transient nucleation times [24][25][26].…”

Section: T Ktmentioning

confidence: 99%

Avrami exponent under transient and heterogeneous nucleation transformation conditions

Sinha¹,

Mandal²

2011

Journal of Non-Crystalline Solids

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The Kolmogorov-Johnson-Mehl-Avrami model for isothermal transformation kinetics is universal under specific assumptions. However, the experimental Avrami exponent deviates from the universal value. In this context, we study the effect of transient heterogeneous nucleation on the Avrami exponent for bulk materials and also for transformations leading to nanostructured materials. All transformations are assumed to be polymorphic. A discrete version of the KJMA model is modified for this purpose.Scaling relations for transformations under different conditions are reported.

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Section: T Ktmentioning

confidence: 99%

Avrami exponent under transient and heterogeneous nucleation transformation conditions

Sinha¹,

Mandal²

2011

Journal of Non-Crystalline Solids

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“…Therefore, thickness dependence of the thermal stability of NiSi 2 thin film is crucial criterion for deep submicron devices. Apart from this, with the continuous scaling down of devices, silicide film thickness (especially ≤50 nm) becomes an important parameter, which controls first stages of the silicide formation and other phenomena such as nucleation, lateral growth, stress and texture [28][29][30]. Therefore, it is very important to understand and control the silicide formation as function of the film thickness for a fixed annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films

Utlu¹,

Artunç²,

Budak³

et al. 2010

Applied Surface Science

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“…However, the growth of silicides under irradiation from our theoretical study indicate a view different from thermal diffusion in terms of the predominant diffusing species during the silicide formation, especially for the three silicides considered in this work. The estimated values of diffusivity of silicon in the three silicide layers under different defect generation rates at room temperature yielded results that lie within the range of integrated inter-diffusion coefficients of these silicides at their formation temperatures [2][3][4][5]15] and this also strongly corroborates silicon as the active diffusing species in the silicide layer under irradiation. The formation temperature of these silicides are shown in Table 4.…”

Section: Resultsmentioning

confidence: 49%

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

Akintunde

Selyshchev

2016

Journal of Physics and Chemistry of Solids

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Abstract.A theoretical approach is developed that describes the formation of a thin-film of AB-compound layer under the influence of radiation-induced vacancy. The AB-compound layer is formed as a result of a chemical reaction between the atomic species of A and B immiscible layers. The two layers are irradiated with a beam of energetic particles and this process leads to several vacant lattice sites creation in both layers due to the displacement of lattice atoms by irradiating particles. Aand B-atoms diffuse via these lattice sites by means of a vacancy mechanism in considerable amount to reaction interfaces A/AB and AB/B. The reaction interfaces increase in thickness as a result of chemical transformation between the diffusing species and surface atoms (near both layers). The compound layer formation occurs in two stages. The first stage begins as an interfacial reaction controlled process, and the second as a diffusion controlled process. The critical thickness and time are determined at a transition point between the two stages. The influence of radiation-induced vacancy on layer thickness, speed of growth, and reaction rate is investigated under irradiation within the framework of the model presented here. The result obtained shows that the layer thickness, speed of growth, and reaction rate increase strongly as the defect generation rate rises in the irradiated layers. It also shows the feasibility of producing a compound layer (especially in near-noble metal silicide considered in this study) at a temperature below their normal formation temperature under the influence of radiation.

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Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

Cited by 68 publications

References 9 publications

Avrami exponent under transient and heterogeneous nucleation transformation conditions

Avrami exponent under transient and heterogeneous nucleation transformation conditions

Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

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