1993
DOI: 10.1557/proc-300-345
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Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar+ Ion Bombardment

Abstract: Differential reflection (DR) spectrometry has been used to investigate and characterize the effect of sputter damage of GaAs by Ar÷ ions. The DR technique provides the photon-induced critical point interband transition energies which are sensitive to the electron and the crystal structure. The spectral dependence of the normalized difference in reflectivity is obtained by periodically scanning monochromatic light across a pair of GaAs samples. In the present case one part has been damaged by Ar÷ ions with ener… Show more

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