Differential photoreflectance from a high-mobility and highly luminescent two-dimensional electron gas

Sydor, M.; Badakhshan, Alireza

doi:10.1063/1.349427

Cited by 30 publications

(6 citation statements)

References 15 publications

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“…The LIA is set to a phase angle that maximizes the dominant PL signal and then adds or subtracts 90° to zero the PL so that the remaining signal is PR. Other approaches to the PL problem are the use of a double monochromator [56], tunable dye laser probe beam [57], sweeping PR [58] or differential PR [59].…”

Section: Basic Techniquesmentioning

confidence: 99%

Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Huang

Pollak

2005

Physica Status Solidi (a)

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We review the use of the contactless methods of photoreflectance (PR), contactless electroreflectance (CER) and wavelength modulated differential surface photovoltage spectroscopy (DSPS) for the nondestructive, room temperature characterization of a wide variety of wafer-scale III -V semiconductor device structures. Some systems that will be discussed include heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions, alloy composition, and dc current gain factor), pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistors (including the determination of the composition, width, and two-dimensional electron gas density in the channel), InGaAsP/InP quantum well edge emitting lasers (including the detection of p-dopant interdiffusion), vertical-cavity surface-emitting lasers (determination of fundamental conduction to heavy-hole excitonic transition and cavity mode).

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Section: Basic Techniquesmentioning

confidence: 99%

Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Huang

Pollak

2005

Physica Status Solidi (a)

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“…For example, Shen et al 3) estimated the surface Fermi levels in GaAs and AlGaAs from the FK oscillations. In recent years, the measurements of FK oscillations have been applied to the characterization of epitaxial layer structures of heterojunction bipolar transistors, [4][5][6][7] high electron mobility transistors [8][9][10][11][12] and so on. In the analysis of the electric field strength, we usually plot the positions of the extrema of the FK oscillations in the asymptotic region from the critical point energy according to the following equation that is derived from the asymptotic form of an electro-optic function: 13) h…”

Section: Introductionmentioning

confidence: 99%

Interference Effect on the Phase of Franz–Keldysh Oscillations in GaAs/AlGaAs Heterostructures

Takeuchi

Yamamoto

Hattori

et al. 2003

Jpn. J. Appl. Phys.

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We have studied photoreflectance spectra of GaAs/Al 0:3 Ga 0:7 As heterostructures from the viewpoint of the phase of Franz-Keldysh (FK) oscillations. The phase of the FK oscillations originating from the GaAs buffer layer shifts with the change of the Al 0:3 Ga 0:7 As-layer thickness, while the period does not vary. The FK-oscillation phase does not depend on the pump power, which suggests that the phase shift is not caused by a difference in the magnitude of modulation. We propose a calculation model for FK oscillations that includes the interference of probe light. Photoreflectance spectra calculated on the basis of this model are compared with the measured spectra. We conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. We also derive a novel analysis method for a linear plot of the extremum positions of FK oscillations based on the above line-shape model. The present method remarkably reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.

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“…There have been many approaches to suppress the spurious signal in PR spectroscopy, such as sweeping PR, 3 dual chopped PR, 9 electrical front-end compensation ͑EFEC͒ PR, 10 employing a subtraction scheme with two detectors, 11 and using a Fouriertransform spectrometer. Note that there is actually a phase difference between the scattered EB and the PL, since the PL has a buildup trail after the laser beam is on and has a quenching trail after the laser beam is off.…”

Section: Experimental Concept and Set-upmentioning

confidence: 99%

A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal

Tan

Jagadish

2010

Review of Scientific Instruments

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A new optical front-end compensation technique to suppress the unwanted, spurious signal in photoreflectance (PR) spectroscopy is developed. In this approach an optical compensation signal, which is amplitude-matched to and in antiphase to the spurious signal, is introduced and directed to the photodetector. The combination of the compensation signal and the spurious signal results in a dc output from the photodetector which is thereafter suppressed by the lock-in amplifier, leaving only the true PR signal to be recovered and amplified. A high spurious signal suppression efficiency is demonstrated and the advantages of the technique are discussed.

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Differential photoreflectance from a high-mobility and highly luminescent two-dimensional electron gas

Cited by 30 publications

References 15 publications

Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Interference Effect on the Phase of Franz–Keldysh Oscillations in GaAs/AlGaAs Heterostructures

A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal

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