Different regimes of Förster-type energy transfer between an epitaxial quantum well and a proximal monolayer of semiconductor nanocrystals

Kos, Šimon; Achermann, Marc; Klimov, Victor I.; Smith, D. L.

doi:10.1103/physrevb.71.205309

Cited by 38 publications

(50 citation statements)

References 20 publications

(26 reference statements)

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“…Consideration should also be given to the transition from localized to free excitons and/or from excitons to more loosely bound electron-hole pairs. For example, in their theoretical treatment of energy transfer in an InGaN QW/colloidal quantum dot system, Kos et al showed that localization of QW excitons tends to decrease the FRET efficiency at lower temperatures, mirroring the saturation behavior seen in curve C. [13] Time-resolved measurements, together with theoretical modeling, will be needed in order to gain a deeper insight into these factors. This is the topic of ongoing work.…”

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confidence: 97%

Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

et al. 2006

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Good progress has recently been made in the development and commercialization of semiconductor light-emitting devices that operate in the visible part of the electromagnetic spectrum, mainly due to the rapidly growing demand for displays, solid-state lighting, and related applications. Of particular significance are the developments in gallium nitride and organic semiconductor technologies. [1][2][3] Epitaxially grown GaN-based inorganic semiconductor structures have found application as efficient, robust, short-wavelength-visible-and UV-light sources. Organic semiconductor light-emitting diodes (LEDs) in turn can span the entire visible spectrum and have low-cost potential due to high-throughput manufacturing, opening attractive prospects for displays and lighting. These two semiconductor families have their own especial advantages and disadvantages. Most notably, GaN structures offer excellent electrical properties but are inherently prone to the complex and expensive fabrication techniques that characterize inorganic semiconductors. Their spectral coverage is also limited, although down-conversion with phosphors allows access to other colors and white-light emission. On the other hand, organic semiconductors offer excellent luminescence properties, with a greater variety of emission wavelengths and significantly higher photoluminescence efficiencies, but exhibit less good electrical behavior. Combining the best attributes of each family would clearly be an attractive proposition.We have previously reported the use of fluorene-based polymer semiconductor films as efficient InGaN wavelengthconversion media, using radiative coupling (absorption/reemission): photons emitted by the InGaN LEDs are absorbed in the polyfluorene film and subsequently re-emitted at longer wavelengths.[4] Here we report a hybrid inorganic/organic semiconductor structure, again employing a polyfluorene thin film, but now with the opportunity to place it in sufficiently close proximity to an underlying InGaN quantum well (QW) that the prospect of highly efficient non-radiative Förster resonant energy transfer (FRET) exists. [5,6] As a consequence, this architecture has the potential to take advantage of the complementary attributes of the two classes of semiconductor that it contains and, thus, might lead to high-performance devices with very desirable electrical and optical characteristics. A schematic of our structures is shown in Figure 1a. The UVlight-emitting InGaN QW (∼ 2 nm thick) is spaced from the blue-light-emitting poly(9,9-dioctylfluorene-co-9,9-di(4-methoxy)phenylfluorene) (F8DP) film (∼ 5 nm thick) by GaN cap layers of variable thickness. Such FRET-based inorganic/organic semiconductor structures have recently been predicted to be theoretically feasible, due to the significantly shorter timescale of the Förster-transfer process relative to direct recombination in the inorganic donor. [7] To date, however, there has not been an experimental demonstration of such a structure. Indeed, the energy-transfer scheme proposed here has...

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confidence: 97%

Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

et al. 2006

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“…1,2 Recently, dye-sensitization of inorganic semiconductors has gained interest, and ET has enabled the design of hybrid nanostructures involving several kinds of organic and inorganic components with the role of energy donor and acceptor for optoelectronic and/or photovoltaic applications. [7][8][9][10][11] Hybrid nanostructured systems based on ET combine nanostructured materials with a large absorption cross section in the visible part of the solar spectrum with high mobility semiconductor layers. ET, enabled by a near-field electromagnetic interaction, generates an electron-hole pair in the semiconductor layer.…”

Section: Introductionmentioning

confidence: 99%

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

et al. 2016

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Abstract. The modification of the radiative decay of a single emitter in close vicinity to a dielectric interface is investigated by studying the photoluminescence (PL) decay dynamics of colloidal semiconductor nanocrystals (NCs) deposited on semiconductor surfaces. The PL decay lifetimes of single CdSe/CdS NCs spin-coated on InP surfaces passivated with thin oxide layers are measured. Electrochemical passivation of the InP surfaces with oxide layers of different thicknesses enables to study the influence of the distance between the semiconductor surface and the NC on the lifetime. A shortening of the PL decay lifetimes of the NCs with respect to their lifetimes on glass strongly suggests the opening of recombination channels for the photogenerated exciton, which we attribute to energy transfer between the NC and the semiconductor. We also experimentally show the influence of the orientation of the NC with respect to the semiconductor surface on the coupling.

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“…For donor QW free carriers the energy transfer rate is proportional to the carrier density, whereas it is independent of carrier density for donor QW excitons. A linear dependence of the direct nonradiative energy transfer rate from an InGaN QW to a monolayer of CdSe QDs has been experimentally reported and found to be in good agreement with a theoretical model for free carrier QW excitations [35]. The QW PL quenching by the Ag nanobox array is also considered to arise due to nonradiative energy transfer to the metal nanoparticle acceptors.…”

Section: Resultsmentioning

confidence: 56%

“…Both increase with increasing carrier density. As previously reported the carrier density dependence of the Förster nonradiative energy transfer rate from a QW is determined by whether the electronic excitations in the QW are free electrons and holes or bound electron hole pairs (excitons) [4,35]. For donor QW free carriers the energy transfer rate is proportional to the carrier density, whereas it is independent of carrier density for donor QW excitons.…”

Section: Resultsmentioning

confidence: 75%

“…In this paper we investigate if the carrier density dependence of the plasmon-coupled nonradiative energy transfer is determined by the same physics as conventional nonradiative energy transfer. FRET from QWs to QDs is known to strongly depend on the QW excitations, excitons or unbound electron-hole pairs [35]. There are some factors which may influence the plasmon-coupled nonradiative energy transfer efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure

et al. 2015

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An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. The nonradiative energy transfer, from an InGaN/GaN quantum well to CdSe/ZnS nanocrystal quantum dots embedded in an ~80 nm layer of PMMA, is investigated over a range of carrier densities within the quantum well. The plasmon-enhanced energy transfer efficiency is found to be independent of the carrier density, with an efficiency of 25% reported. The dependence on carrier density is observed to be the same as for conventional nonradiative energy transfer. The plasmon-coupled energy transfer enhances the QD emission by 58%. However, due to photoluminescence quenching effects an overall increase in the QD emission of 16% is observed. References and links1. E. F. Schubert, Light-Emitting Diodes (Cambridge University, 2006). 2. H. V. Demir, S. Nizamoglu, T. Erdem, E. Mutlugun, N. Gaponik, and A. Eychmuller, "Quantum dot integrated LEDs using photonic and excitonic color conversion," Nano Today 6(6), 632-647 (2011). 3. H. S. Chen, C.-K. Hsu, and H. Y. Hong, "InGaN-CdSe-ZnSe quantum dots white LEDs," IEEE Photon.Technol. Lett. 18(1), 193-195 (2006). 4. M. Achermann, M. A. Petruska, S. Kos, D. L. Smith, D. D. Koleske, and V. I. Klimov, "Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well," Nature 429(6992), 642-646 (2004). 5. S. Nizamoglu, E. Sari, J. H. Baek, I. H. Lee, and H. V. Demir, "White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum wells to colloidal CdSe/ZnS core/shell quantum dots," New J. Phys. 10(12), 123001 (2008). 6. T. Förster, "Intermolecular energy migration and fluorescence," Ann. Phys. 437, 55-75 (1948).

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Different regimes of Förster-type energy transfer between an epitaxial quantum well and a proximal monolayer of semiconductor nanocrystals

Cited by 38 publications

References 20 publications

Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure

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