Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces

Abstract

The electrical and physical properties of ErSi x on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and the obtained SBH is larger than 0.4 eV on a Si(551) surface, while this difference is caused by the quantity of Si atoms in ErSi x and on Si(100) this is less than on Si(551). These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress

“…It is considered that the work function difference is caused by the film stress on ErSi x . We have already reported the quantity of Si atoms in ErSi x and the SBH are changed between Si(100) and Si(551) (17). More Si contains in ErSi x on Si(551) surface compared with that on Si(100).…”

Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon

“…In Si(111) case, the SBHs are independent of Er deposition thickness and very low SBHs as around 0.25 eV are observed. On Si(551), ErSi x (0001) tends to grow on Si(111) has been reported (17). It is considered that the SBH is not determined by the growth of the ErSi x crystal orientation, but is determined by the silicon surface orientations Fig.…”

“…We have already reported that the contact resistance on any crystal orientation p + -silicon can be reduced by using Pd 2 Si (11). However, we have also reported the properties of ErSi x on Si(100), ( 111) and ( 551) surfaces (17,18) and a reducing SBH on Si(551) surface is more difficult than that on Si(100). In this paper, we investigated SBH diode properties of ErSix and influences of the ErSix crystallinity on n-type Si(100) and Si(551) surfaces.…”

Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching

“…The low R c due to low SBH is obtained using erbium silicide (ErSi x ) for n + silicon and palladium silicide (Pd 2 Si) for p + silicon on Si(100) (11)(12)(13)(14)(15)(16).…”