Difference analysis method for negative bias temperature instability lifetime prediction in deeply scaled pMOSFETs

Abstract

The fluctuation significantly affects the lifetime prediction of negative bias temperature instability (NBTI) for deeply scaled pMOSFETs. In this paper, we present a novel difference method to separate the time dependent fluctuation-related component from the NBTI quasi-static component in the threshold voltage shift. The extracted fluctuation-related component exhibits weak temperature and time dependences which is consistent with the characteristic of as-grown defect-induced trapping and detrapping while the quasi-static component presents electrical behaviors of generated-defect-induced NBTI degradation. On the basis of these results, a composite NBTI model is constructed and lifetime projection is derived for the small pMOSFETs.

Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors

“…Hence, these defects have been in the focus of investigation more than 40 years. [3][4][5][6][7][8][9][10][11][12][13][14] Numerous methods used in the study of SiO 2 and SiO 2 -Si interface nature and their characterization can be roughly divided into two categories: the methods implemented on the MOS capacitor structure and the methods implemented on the complex MOS electron devices. These methods are mostly based on electrical techniques and they generally yield the results related to the energy distribution of defects in the oxide and at the interface, thus allowing the prediction of the defect nature and modelling of their behavior.…”