Dielectrophoretically Controlled Fabrication of Single-Crystal Nickel Silicide Nanowire Interconnects

Dong, Lifeng; Bush, Jocelyn; Chirayos, Vachara; Solanki, R.; Jiao, Jun; Ono, Y.; Conley, John F.; Ulrich, Bruce

doi:10.1021/nl051650+

Cited by 117 publications

(94 citation statements)

References 19 publications

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“…[2][3][4] Recently, several research groups have studied nickel silicide nanowires (NiSi NWs). 3,[5][6][7][8] They confirmed that NiSi NWs show lower resistivity when formed at lower processing temperature with less reaction phase at interface compared to other metallic silicide materials. As a result, NiSi NWs are considered a promising material for use as gate and source/drain electrodes in current complementary metal oxide semiconductor devices.…”

mentioning

confidence: 84%

Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

Kim¹,

Seol²,

Lee³

et al. 2012

Applied Physics Letters

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Direct CD4þ T lymphocytes were separated from whole mouse splenocytes using 1-dimensional ferromagnetic nickel silicide nanowires (NiSi NWs). NiSi NWs were prepared by silver-assisted wet chemical etching of silicon and subsequent deposition and annealing of Ni. This method exhibits a separation efficiency of $93.5%, which is comparable to that of the state-of-the-art superparamagnetic bead-based cell capture ($96.8%). Furthermore, this research shows potential for separation of other lymphocytes, B, natural killer and natural killer T cells, and even rare tumor cells simply by changing the biotin-conjugated antibodies. Silicides are widely used as metal contact materials in modern silicon microelectronics because of their low contact resistivity and the excellent junction interface on silicon (Si).1,2 With the recent improvement in nanoscale Si devices, metal silicides have received significant attention because of their unique properties and potential applications in electronic and photonic devices.2-4 Recently, several research groups have studied nickel silicide nanowires (NiSi NWs).3,5-8 They confirmed that NiSi NWs show lower resistivity when formed at lower processing temperature with less reaction phase at interface compared to other metallic silicide materials. As a result, NiSi NWs are considered a promising material for use as gate and source/drain electrodes in current complementary metal oxide semiconductor devices.

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confidence: 84%

Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

Kim¹,

Seol²,

Lee³

et al. 2012

Applied Physics Letters

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“…However, requirements that materials should typically grow vertically on the substrate may limit its application. Field assisted methods align NWs normally using the dielectrophoresis (DEP) or magnetic field [40,41]. This alignment mechanism can be clearly illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

Electrospun nanowire arrays for electronics and optoelectronics

2016

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Electrospinning is a cheap and stable technique that allows the fabrication of continuous and uniform fibers, either organic or inorganic, with diameters ranging from tens of nanometers to several micrometers for mass production [5−7]. Moreover, highly ordered aligned nanowire array (NWA) can also be easily achieved on various substrates based on modified electrospinning, which is greatly beneficial to the following applications of NWs in various fields shown in Fig. 1. In this review, we provide a concise retrospection on the assembling methods and primarily highlight the electrospinning method and corresponding applications of NWA including electrodes, field effect transistors (FET), piezoelectric sensor, gas sensor, and photodetectors. We also give comments and prospection in the ABSTRACT Alignment of NWs (NWs) is the core issue for integrating NWs into nanodevices in future. This review made a concise retrospect on reported assembling methods and mainly emphasized on the electrospinning method and its developments, as well as the following applications of the aligned nanowire array (NWA) in electronics and optoelectronics. First, we classified reported assembling methods into three categories: "grow then place", "place then grow" and "grow and place" (electrospinning method). Then, we focused on the electrospinning method and its modified method including field assisted method, rotating collector assisted method and near-field assisted methods, as well as their merits and defects, respectively. Next, we illustrated the applications of the NWs arrays fabricated by electrospinning in field effect transistors (FET), gas sensors, piezoelectric sensors and photodetectors. Finally, we made a short conclusion and prospection on electrospinning method. As an easy and cheap nanowire fabrication and alignment method, electrospinning has a bright future in one-dimensional materials based electronics and optoelectronics.

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“…NWs prepared by this technique are suitable for postgrowth processing, typically via dispersion in solution. Yet, very few studies have so far focused on SiNW suspensions, [47][48][49][50] despite the fact that this is one of the main research topics in the carbon nanotube community. 35,[51][52][53] In most cases, solution processing was investigated just as a simple step toward dispersion of individual, as-grown NWs on solid substrates for transmission electron microscopy ͑TEM͒ or electrical characterization.…”

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confidence: 99%

Thermal and chemical vapor deposition of Si nanowires: Shape control, dispersion, and electrical properties

Colli

Fasoli

Beecher

et al. 2007

Journal of Applied Physics

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We investigate and compare complementary approaches to SiNW production in terms of yield, morphology control, and electrical properties. Vapor-phase techniques are considered, including chemical vapor deposition ͑with or without the assistance of a plasma͒ and thermal evaporation. We report Au-catalyzed nucleation of SiNWs at temperatures as low as 300°C using SiH 4 as precursor. We get yields up to several milligrams by metal-free condensation of SiO powders. For all processes, we control the final nanostructure morphology. We then report concentrated and stable dispersions of SiNWs in solvents compatible with semiconducting organic polymers. Finally, we investigate the electrical response of intrinsic SiNWs grown by different methods. All our SiNWs exhibit p-type behavior and comparable performance, though in some cases ambipolar devices are observed. Thus, processing and morphology, rather than the growth technique, are key to achieve optimal samples for applications.

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Dielectrophoretically Controlled Fabrication of Single-Crystal Nickel Silicide Nanowire Interconnects

Cited by 117 publications

References 19 publications

Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

Electrospun nanowire arrays for electronics and optoelectronics

Thermal and chemical vapor deposition of Si nanowires: Shape control, dispersion, and electrical properties

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