The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavyion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p 6 nl n l dielectronic recombination (DR) resonances associated with 3s → nl core excitations, 2s 2p 6 3s nl n l resonances associated with 2s → nl (n = 3, 4) core excitations, and 2p 5 3s nl n l resonances associated with 2p → nl (n = 3, . . . , ∞) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s → 3p n l and 3s → 3d n l (both n = 3, . . . , 6) and 2p 5 3s 3l n l (n = 3, 4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.PACS numbers: 34.80. Lx, 36.20.Kd, 95.30.Dr, 98.58.Bz.