Dielectric tunability and microwave properties of Ba0.5Sr0.5TiO3-BaMg6Ti6O19 composite ceramics for tunable microwave device applications

Chou, Xiujian; Wang, Jing; Zhao, Zhenyu; Geng, Wenping; Zhang, Wendong; Zhai, Jiwei

doi:10.1007/s10832-011-9643-x

Cited by 10 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among perovskite oxides, (Ba , Sr)TiO 3 (BST) has attracted much attention as a high-k dielectric material for application in storage capacitors of gigabit dynamic random-access memory (DRAM), ferroelectric random-access memory (FRAM), and electrically tunable microwave devices due to its superior properties (e.g., high dielectric constant, high dielectric breakdown strength, and low dissipation factor) [127][128][129][130][131]. In particular, the capacitive properties of BST can be tuned by more than 50 % at low bias levels (<5 V) resulting in similar percentage changes in frequency characteristics of tuned circuits [130,131].…”

Section: Perovskite-based Oxide Dielectricsmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

View full text Add to dashboard Cite

The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

show abstract

Section: Perovskite-based Oxide Dielectricsmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

View full text Add to dashboard Cite

show abstract

“…It can be seen that large ε(0) is helpful to achieve high tunability. However, varactors should have low permittivity in order to achieve a better impedance matching in circuit, which goes against the high tunability [15,16]. To achieve high tunability at low permittivity, many works improve the working electric field.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Tunability Achieving at Low Permittivity and Electric Field in (Ba0.91Ca0.09)(SnxZr0.2−xTi0.8)O3-2 mol% CuO-1 mol% Li2CO3 Ceramics

et al. 2023

View full text Add to dashboard Cite

Ferroelectric varactors should have high tunability at low permittivity and a working electric field to obtain better impedance matching and stable tunability. In this work, (Ba0.91Ca0.09)(SnxZr0.2−xTi0.8)O3-2 mol% CuO-1 mol% Li2CO3 (abbreviated as BCSZT100x, x = 0.05, 0.10, 0.15 and 0.20, respectively) are prepared to achieve high tunability at low permittivity and a working electric field. The tunable mechanisms are investigated based on crystal structure, micro-morphology and the permittivity-temperature spectrum. The results show that the shrink of oxygen octahedron and weaker interaction force between Sn4+ and O2− make BCSZT5 ceramic have a higher tunability value of 26.55% at low permittivity (1913) and a working electric field (7.3 kV/cm). The tunability value of BCSZT5 ceramic increases by 58%, while its permittivity decreases by 25%, compared with x = 0. Those advantages make BCSZT5 ceramic have substantial application prospects in varactors.

show abstract

Low loss and middle permittivity of (1 − x) Ca4La2Ti5O17–xNdAlO3 dielectric resonators with near-zero temperature coefficient of the resonant frequency

Chen

Hou

et al. 2011

J Mater Sci

View full text Add to dashboard Cite

Dielectric tunability and microwave properties of Ba0.5Sr0.5TiO3-BaMg6Ti6O19 composite ceramics for tunable microwave device applications

Cited by 10 publications

References 19 publications

Overview of electroceramic materials for oxide semiconductor thin film transistors

Overview of electroceramic materials for oxide semiconductor thin film transistors

Enhanced Tunability Achieving at Low Permittivity and Electric Field in (Ba0.91Ca0.09)(SnxZr0.2−xTi0.8)O3-2 mol% CuO-1 mol% Li2CO3 Ceramics

Low loss and middle permittivity of (1 − x) Ca4La2Ti5O17–xNdAlO3 dielectric resonators with near-zero temperature coefficient of the resonant frequency

Contact Info

Product

Resources

About