Dielectric response on ultraviolet light irradiation of Ba0.85Ca0.15Zr0.1Ti0.9O3 based ceramics

Jaiban, Panupong; Tongtham, Maneeporn; Wannasut, Pimpilai; Watcharapasorn, Anucha

doi:10.1016/j.matlet.2019.02.026

Cited by 16 publications

(7 citation statements)

References 8 publications

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“…These variations in the dielectric properties of the PZT films under UV illumination are due to the creation of oxygen vacancies at the metal–dielectric interface. [ 10 ] An internal barrier layer capacitor model suggests enhancement in the effective capacitance (or dielectric constant) under UV illumination. [ 10,41,42 ] Change in the value of dielectric constant of the fabricated ferroelectric capacitor is measured using the values of dielectric constant in the absence ( ε 0 ) and the presence of UV light illumination ( ε u ) and is given as

Change in dielectric constant (%) = [\frac{ε_{u} - ε_{o}}{ε_{o}}] \times 100

…”

Section: Resultsmentioning

confidence: 99%

“…[ 3,8 ] Utilization of UV light is one of the ways to enhance and tune the dielectric and ferroelectric properties of the ferroelectrics. [ 9,10 ] There are a number of reports available on the tunable dielectric properties of ferroelectrics using UV illumination. Nathabumroong et al reported 19% dielectric enhancement in the presence of UV radiation for the lanthanum doped bismuth ferrite (BLFO) ceramic.…”

Section: Introductionmentioning

confidence: 99%

“…[ 11 ] More recently, Jaiban et al studied dielectric enhancement in barium calcium zirconate titanate (BCZT)‐based ceramic and achieved 60% dielectric enhancement in the presence of UV illumination. [ 10 ] Jaiban et al showed the influence of acceptor dopants, copper, magnesium, and iron, on electrical and optical properties of Ba 0.7 Ca 0.3 TiO 3 ceramics and tuned the electrical properties under UV illumination. [ 12 ] Jaiban et al reported the tunable piezoelectric, dielectric, and ferroelectric properties using the Mg and Nb dopant in calcium barium titanate (BCT) ceramics.…”

Section: Introductionmentioning

confidence: 99%

“…[ 18 ] The generation of photocarriers and induced oxygen vacancies during the UV illumination can tune the dielectric properties of the sample. [ 9,10 ] PZT polycrystalline films, especially thick films, are preferred for tunable applications, because there is a formation of well‐defined grains with sharp grain boundaries. These domains can move easily under the application of applied external field and actively tune the dielectric and ferroelectric properties.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Vandana

Gupta

Tomar

et al. 2021

Physica Status Solidi (a)

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This work studies the effect on dielectric properties of lead zirconium titanate (Pb1.1Zr0.4Ti0.6O3 [PZT]) thick films under UV light illumination (wavelength =325 nm) for the realization of tunable capacitors. A modified sol–gel technique is utilized for the growth of polycrystalline PZT thick films on nickel substrate. The PZT films are deposited on Ni, and three different temperatures (450, 550, and 650 °C) are selected for annealing the samples in air atmosphere. Dielectric studies are performed on the optimized films, under varying intensities of UV radiation. Enhanced dielectric constant values are observed under UV illumination for the PZT films annealed at 550 and 650 °C due to generation of photocarriers and induced oxygen vacancies. An appreciable change in dielectric constant of about 75% at 1 MHz frequency is seen for the PZT film fabricated at higher annealing temperature (650 ºC) under UV illumination (intensity = 12 mW cm−2). The obtained results are encouraging for the utilization of thick PZT films in tunable capacitors.

show abstract

Change in dielectric constant (%) = [\frac{ε_{u} - ε_{o}}{ε_{o}}] \times 100

…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Vandana

Gupta

Tomar

et al. 2021

Physica Status Solidi (a)

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“…Ba 0.85 Ca 0.15 Zr 0.1 Ti 0.9 O 3 (BCZT) is a lead-free ferroelectric material, which has exhibited a potential performance to replace PZT material in several electronic devices such as sensors, actuators, and capacitors [7] due to its suitable dielectric and piezoelectric properties. BCZT is quite sensitive with deviation from its stoichiometry and ion doping, which produced phase transition, crystal structure, and chemical defects [8,9]. The generated defects can dope free mobile charge carriers and enhance electronic and thermal transport in BCZT material [9].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Ba0.85Ca0.15Zr0.1Ti0.9O3 Addition on the Phase, Microstructure, and Thermoelectric Properties of Ca3Co4O9 Ceramics

Jaiban

Wannasut

Watcharapasorn

2021

Preprint

Self Cite

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In this work, the influences of Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) addition on phase, microstructure, and thermoelectric properties of Ca3Co4O9 (CCO) were investigated. (1-x)CCO-(x)BCZT ceramics where x = 0, 0.003, 0.005, and 0.010 were fabricated successfully via a conventional solid-state sintering at 1,223 K for 24 hrs. The substitution of BCZT introduced the chemical defects (V''Co, V'''Co, V''Ca) in CCO ceramic, which increased charge carrier concentration and enhanced the electrical conductivity. The presence of Co3+ improved the Seebeck coefficients of CCO ceramic. The thermal conductivity of CCO ceramic decreased when BCZT was added. The addition of BCZT at x = 0.010 promoted the highest thermoelectric power factor (PF~235 mW/mK2), and the highest figure of merit (ZT~0.5) at 800 K, which present this ceramic an alternative p-type oxide thermoelectric for a high-temperature thermoelectric device.

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Light‐Induced Dielectric Enhancement in a 2D Dion–Jacobson Type Perovskite Phase Transition Material

Gao,

Xu,

Guo

et al. 2023

Advanced Optical Materials

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Stimuli‐responsive materials, showing bistable behaviors between two distinct states under external stimuli, can be potentially applied as basic components of modern electrical and electronic devices. 2D hybrid perovskites hold a promise to switch and tune dielectric bistability based on their solid‐state phase transitions. Here, strong dielectric enhancements are successfully actualized by virtue of light illumination in a Dion–Jacobson (DJ) type 2D hybrid perovskite, (HDA)(MA)2Pb3Br10 (1, where HDA is 1,6‐hexanediammonium and MA is methylammonium). Upon heating, 1 exhibits an ordered–disordered phase transition ≈ 324 K (Tc), accompanying a transition from its low to high dielectric state. Strikingly, its light‐induced dielectric constant changes are greatly enhanced with a magnitude up to 250% near the Tc, superior to most traditional inorganic phase transition materials. This process closely relates to the photoexcited dielectric effect that is caused by the interband photo‐excitation. Benefitting from the stability of DJ‐type perovskite structure, the switching cycles of dielectric enhancement display operational stability with superior anti‐fatigue characteristics. As per the knowledge, the findings of this strong dielectric enhancement are unprecedented in the family of 2D DJ‐type hybrid perovskites, which will facilitate broad interest in exploiting new stimuli‐responsive materials to assemble high‐performance smart electronic devices.

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Dielectric response on ultraviolet light irradiation of Ba0.85Ca0.15Zr0.1Ti0.9O3 based ceramics

Cited by 16 publications

References 8 publications

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

The Effects of Ba0.85Ca0.15Zr0.1Ti0.9O3 Addition on the Phase, Microstructure, and Thermoelectric Properties of Ca3Co4O9 Ceramics

Light‐Induced Dielectric Enhancement in a 2D Dion–Jacobson Type Perovskite Phase Transition Material

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