Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001)

Lange, R.; Junge, Kelly; Zollner, Stefan; Iyer, Subramanian S.; Powell, Adrian P.; Eberl, K.

doi:10.1063/1.363827

Cited by 32 publications

(15 citation statements)

References 53 publications

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“…The critical layer thickness for Si 1À x C x /Si(100) heterostructure has been discussed in Refs. [33][34][35] based on the method of Matthews and Blakeslee [36]. In the case of the compressive strain, disparity between the resolved shear stresses forces the 901 and the 301 partial dislocations to separate.…”

Section: Resultsmentioning

confidence: 99%

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

Arimoto

Furukawa

Yamanaka

et al. 2013

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

Arimoto

Furukawa

Yamanaka

et al. 2013

Journal of Crystal Growth

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“…For the analysis of the Raman results, we assume that the stress is biaxial in the (001) plane, i.e., that the shear forces only act along the interface, and can be described by the stress tensor (8)(9) l/x ° !l X= 0 X . 0 0…”

Section: Discussionmentioning

confidence: 99%

Optical studies of phosphorus-doped poly-Si films

Zollner¹,

Liu²,

Chen³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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We have performed a detailed optical study of phosphorus-doped polycrystalline silicon films (prepared by amorphous deposition with in situ doping and annealing by thermal oxidation up to 1000°C) using Raman spectroscopy and variable-angle spectroscopic ellipsometry from 0.7 to 5 eV. We focus on the determination of strain and grain size using optical techniques and compare with results of a structural analysis using plan-view transmission electron microscopy and atomic force microscopy. We analyze the derivatives of our ellipsometry data (peak shifts and broadenings) using analytical lineshapes,which are affected by grain size, film thickness, doping, and inhomogeneity, but only minimally by macroscopic biaxial strain.

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“…6 Based on the elastic theory, the in-plane strain component e ? and the perpendicular strain component e jj , i.e., in the growth direction are given by 8,20,22,28 e ? ¼ a Ge À a GeSn a GeSn and e jj ¼ 2S 12…”

Section: Elastic Theory Model For Stress Induced Changes In the Omentioning

confidence: 99%

“…Biaxially strained tetrahedral semiconductors have shown to exhibit E 1 and E 1 þ D 1 band gaps following the expressions: 8,20,22,28 …”

Section: Elastic Theory Model For Stress Induced Changes In the Omentioning

confidence: 99%

Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

Medikonda¹,

Muthinti²,

Vasić³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The characterization of the optical properties of pseudomorphic Ge1−xSnx/Ge/Si (x = 0 to 0.11) alloys from the IR to UV is presented. The Ge1−xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering (RBS) and RBS ion channeling methods were used to confirm the Sn composition and substitutional nature of the Sn into the Ge lattice. The pseudomorphic nature of the Ge1−xSnx on Ge is confirmed using high resolution x-ray diffraction (HRXRD) and transmission electron microscopy. Although HRXRD reciprocal space maps indicated that the Ge1−xSnx was pseudomorphic to Ge, the shape of the Bragg peaks indicated that the sample surface was rough. The rough surface morphology is confirmed using atomic force microscopy. The complex dielectric function is reported in the IR, visible, and UV spectrum in the wavelength range of 0.2–5.06 eV. The E1, E1 + Δ1, E2, and E0 critical points are extracted using second and third derivative line shape fitting and are compared with the elastic theory calculations of strained Ge1−xSnx (x = 0 to 0.11) alloys and fully relaxed Ge1−xSnx (x = 0 to 0.11) alloys. The E0 critical point energies are observed to have slightly larger values than those calculated for completely relaxed Ge1−xSnx alloys due to the presence of compressive strain.

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Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001)

Cited by 32 publications

References 53 publications

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

Optical studies of phosphorus-doped poly-Si films

Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

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