Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification

Clima, Sergiu; Verhulst, Anne S.; Bagul, Pratik; Truijen, Brecht; McMitchell, S. R. C.; Wolf, Ingrid De; Pourtois, Geoffrey; Houdt, J. Van

doi:10.1109/ted.2022.3194822

Cited by 5 publications

(2 citation statements)

References 31 publications

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“…For a negatively or positively polarized FeCAP, ϵ PE is predicted to increase when E FE approaches the coercive field and to (sharply) decrease after the polarization reversal. Note that [27] specifically discusses BaTiO 3 , however we expect an equivalent polarization dependence of ϵ PE in HZO, since the physical mechanism underlying the polarization reversal in HZO is similar as well. Hence, the observed butterfly peaks in the C-V response (Fig.…”

Section: B Understanding the Origin Of The Capacitive Mwmentioning

confidence: 91%

“…They exhibit the typical butterfly motif of the dielectric response of a FE, which can be modeled as ϵ = ϵ PE + ϵ FE , where ϵ PE and ϵ FE (= ∂P FE /∂E FE ) represent the paraelectric (electronic and ionic contributions due to atomic vibrations) and the ferroelectric (dipolar contribution) component of ϵ, respectively, with E FE the local electric-field in the FE-layer [26], [27]. A recent study has shown that ϵ PE , in a defect-free FE, is not constant but depends on the polarization state [27]. For a negatively or positively polarized FeCAP, ϵ PE is predicted to increase when E FE approaches the coercive field and to (sharply) decrease after the polarization reversal.…”

Section: B Understanding the Origin Of The Capacitive Mwmentioning

confidence: 99%

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Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Mukherjee

Bizindavyi

Clima

et al. 2023

IEEE Electron Device Lett.

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Energy-efficient memory elements having a non-volatile memory window (MW) with a non-destructive read operation are highly desirable for both random access memory and compute-in-memory applications. In this work, we demonstrate a record high non-volatile capacitive MW and non-destructive read in hafnium zirconate-based metal-ferroelectric-metal capacitors (FeCAPs). Firstly, we show that a non-zero capacitive MW at zero read voltage can be realized by engineering an asymmetry between the top and bottom ferroelectric-metal interfaces and demonstrate a record high MW of ∼4.71×ϵ 0 at 0 V. Secondly, we show that the capacitive MW can be further improved by optimizing a non-zero read voltage. This allows to achieve a record high MW of ∼7.5×ϵ 0 for the asymmetric FeCAP, and even opens up a MW as high as ∼8.0×ϵ 0 for the symmetric FeCAP. Finally, we demonstrate that the MW can be reliably read non-destructively as long as the read voltage is carefully selected to avoid partial or full polarization switching during the read operation.

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Section: B Understanding the Origin Of The Capacitive Mwmentioning

confidence: 91%

Section: B Understanding the Origin Of The Capacitive Mwmentioning

confidence: 99%

Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Mukherjee

Bizindavyi

Clima

et al. 2023

IEEE Electron Device Lett.

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Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor

Mukherjee,

Bizindavyi,

Clima

et al. 2024

Solid-State Electronics

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Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches

Lee,

Narayan,

Kim

et al. 2024

ACS Appl. Electron. Mater.

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The integration of ferroelectric hafnium oxide (HfO 2 ) into semiconductor device structures has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) technology. The high compatibility of ferroelectric HfO 2 with backend-of-the-line (BEOL) as well as conventional complementary metal-oxide-semiconductor (CMOS) process technologies enables the development of highly efficient embedded IMC applications. In this work, we consider both resistive and capacitive approaches to the realization of IMCcompatible devices using ferroelectric HfO 2 . Process optimization and device integration concepts based on ferroelectric HfO 2 are presented in this context. This Spotlight on Applications also reviews the reliability and reproducibility of HfO 2 -based ferroelectric devices. IMC architectures involving resistive systems are well established and mature. We discuss the capabilities and remarkable progress toward the integration of memristive ferroelectric HfO 2 devices in these IMC architectures. Special attention is also given to the recently emerged ferroelectric capacitor (Fe-Cap)-based memcapacitive systems, which offer low-power consumption based on their open-circuit nature. Distinguished by their nondestructive readout capability, Fe-Caps stand out from other capacitive memories that require switching memory states and refresh cycles during access operations. Finally, we compare the electrical performance of Fe-Cap devices with other memristive technologies for IMC applications. This provides insights into the potential of ferroelectric HfO 2 -based devices for the development of highly efficient and advanced IMC systems.

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Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification

Cited by 5 publications

References 31 publications

Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor

Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches

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