Dielectric response in ferroelectric superlattices

Li, Shaoping; Eastman, Jeffrey A.; Vetrone, J.; Newnham, R. E.

doi:10.1080/01418639708241077

Cited by 40 publications

(23 citation statements)

References 15 publications

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“…There clearly exists a strong interlayer coupling between layers that leads to this behavior in FE heterostructures. This interlayer interaction has been the subject of several theoretical studies [10,[12][13][14][15][16][17][18][19][20][21]. Recently, we developed a thermodynamic model to understand the role of internal electrostatic fields in a ferroelectric bilayer [22,23] that demonstrates that the "strength" of the coupling can be quantitatively described using Landau theory of phase transformations, theory of elasticity, and principles of electrostatics.…”

Section: Introductionmentioning

confidence: 98%

Phase Transformation Characteristics of Ferroelectric-Paraelectric Bilayers

Zhong

Alpay

Mantese

2006

Integrated Ferroelectrics

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A thermodynamic analysis is presented to demonstrate that ferroelectric multilayers interact through internal elastic, electrical, and electromechanical fields and the "strength" of the coupling can be quantitatively described using Landau theory of phase transformations, theory of elasticity, and principles of electrostatics. The theoretical analysis indicates that there is a strong electrostatic coupling between the layers that may lead to the modification of the phase transformation characteristics of ferroelectric superlattices and multilayer heterostructures. It also results in the suppression of ferroelectricity at a critical paraelectric layer thickness for ferroelectric-paraelectric bilayers.

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Section: Introductionmentioning

confidence: 98%

Phase Transformation Characteristics of Ferroelectric-Paraelectric Bilayers

Zhong

Alpay

Mantese

2006

Integrated Ferroelectrics

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“…[6] Perovskite compounds in the BaTiO 3 -SrTiO 3 system are the most promising candidates for the fabrication DRAMs with very large scale integration and have been extensively studied with respect to the dielectric properties of the paraelectric phase. [7] The fabrication of superlattice materials constitutes a powerful method to control the crystal structure and ferroelectric properties artificially over a wide temperature range, [8] explore predications of giant dielectric constants, [9,10] and produce new functional devices. [11] Ferroelectric multilayer thin films, such as PbTiO 3 /Pt/ PbTiO 3 ultrathin multilayer capacitors, have been prepared by a sol-gel process.…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Lin

Hsiao

et al. 2010

Metall Mater Trans A

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multilayer films with Pt bottom and top electrodes have been prepared by a double target radio frequency (RF) magnetron sputtering, and their dielectric properties have been characterized as a function of temperature, frequency, bias voltage, and applied voltage. The X-ray diffraction (XRD) pattern reveals that the deposited (SrTiO 3 /BaTiO 3 ) n multilayer films have a designed modulation. The interfaces within the multilayer films appear smooth and dense without any microcracks, and the adhesion is very good. The dielectric constant of the (SrTiO 3 /BaTiO 3 ) n multilayer film increases with increasing layer number (n), and the leakage current density is less than 1 9 10 À8 AAEcm À2 for the applied voltage less than 5 V for the 450-nm-thick (SrTiO 3 /BaTiO 3 ) n multilayer films. The remanent polarization (P r ) and the coercive field (E c ) of the 350-nm-thick (SrTiO 3 /BaTiO 3 ) 4 multilayer films are 7 lCAEcm À2 and 60 kVAEcm À1 , respectively, exhibiting ferroelectricity. (SrTiO 3 /BaTiO 3 ) 4 multilayer films have a high E c and a lower P r , as compared with the bulk BaTiO 3 single crystal. The 450-nm-thick (SrTiO 3 /BaTiO 3 ) 4 multilayer films have a leakage current density-voltage characteristic, which makes them suitable for application in DRAMs capacitors.

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“…(The material is assumed embedded in a nonpolar medium, so that DP AE P AE .) But it is possible for the ferroelectric material to induce polarization into the embedding dielectric, with interesting consequences, as demonstrated in recent papers [37,38].) The equation of state derived from the generalized free energy (3.1) has the form of the Euler ± Lagrange equation:…”

Section: à2mentioning

confidence: 99%

Two-dimensional ferroelectrics

Fridkin¹,

Ducharme²,

Bune³

et al. 2000

Ferroelectrics

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Blinov, L. M.; Fridkin, V. M.; Palto, S.P.; Bune, A. V.; Dowben, Peter A.; and Ducharme, Stephen, "Two-Dimensional Ferroelectrics" (2000). Abstract. The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of $ 200 A and the thinnest ferroelectric films were $ 200 A thick, macroscopic sizes on an atomic scale. Langmuir ± Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir ± Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric ± paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the twodimensional layers.

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Dielectric response in ferroelectric superlattices

Cited by 40 publications

References 15 publications

Phase Transformation Characteristics of Ferroelectric-Paraelectric Bilayers

Phase Transformation Characteristics of Ferroelectric-Paraelectric Bilayers

Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Two-dimensional ferroelectrics

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