Dielectric relaxation spectroscopy in poly(hydroxyethyl acrylates)/water hydrogels

Kyritsis, Apostolos; Pissis, P.; Grammatikakis, J.

doi:10.1002/polb.1995.090331205

Cited by 298 publications

(157 citation statements)

References 32 publications

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“…Increase in the values of e 0 with the increasing applied bias voltage is evident especially at the low frequencies. The high values of e 0 were observed at low frequencies and low negative bias voltage can be attributed to interfacial Maxwell-Wagner polarization [33] and space-charge polarization [45]. Both dispersion in e 0 -f and e 00 -f curves are evident especially at low frequencies because of the reaction of interface traps and charge carriers in (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructure to frequency.…”

Section: Resultsmentioning

confidence: 82%

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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a b s t r a c tThe voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e 0 ), dielectric loss (e 00 ), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V 0 and M 00 ) of the (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the e 0 , e 00 , tan d and the real and imaginary parts of the electric modulus (V 0 and M 00 ) obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the e 0 decrease with increasing frequencies, tan d, V 0 and M 00 increase with the increasing frequency. Also, the dielectric loss (e 00 ) have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface.

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Section: Resultsmentioning

confidence: 82%

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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“…The same is true for the samples with higher CB content. The further increase of ε′(f) in these samples at even lower frequencies is attributed to space charge polarization [28]. Figures 10 and 11 show results for the electrical ac conductivity σ calculated from the measured dielectric loss ε′(f) by using Equation (3).…”

Section: The Drs and Conductivity Measurementsmentioning

confidence: 98%

Structural, mechanical and electrical characterization of epoxy-amine/carbon black nanonocomposites

Kosmidou¹,

Vatalis²,

Delides³

et al. 2008

Express Polym. Lett.

Self Cite

101

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Abstract. This work presents an insight into the effect of preparation procedure and the filler content on both electrical and mechanical properties of a nanocomposite system. For the preparation of the nanocomposites diglycidyl ether of bisphenol A (DGEBA) was used with triethylenetetramine (TETA) as a curing agent. As fillers carbon black (CB) nanoparticles with size from 25 to 75 nm were used. The characterization was done using Dynamic Mechanical Analysis (DMA), Dielectric Relaxation Spectroscopy (DRS), Differential Scanning Calorimetry (DSC), Wide Angle X-ray Diffraction (WAXD) and electrical conductivity measurements. The dependence of the dynamic mechanical and dielectric parameters (E′, E″, tanδ, ε′, ε″, σ and Tg) is associated with the filler content and is controlled by the employed curing conditions. An increase in electrical conductivity, which is observed at about 1% w/w of carbon black, indicates the creation of conducting paths and is associated with the Maxwell Wagner Sillars (MWS) relaxation, probably due to the formation of aggregated microstructures in the bulk composite.

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“…The fast rising trend of tan at low frequencies is a representative of the presence of DC conductivity in CT ceramic. Higher values of dielectric constant interestingly observed only at very high temperature and very low frequencies may be attributed to free charge buildup at the interfaces within the bulk of the sample (interfacial Maxwell-Wagner (MW) polarization [21]) and at the interface between the sample and the electrodes (space-charge polarization) [22].…”

Section: Dielectric Analysismentioning

confidence: 99%

Frequency and temperature dependent electrical characteristics of CaTiO3 nano-ceramic prepared by high-energy ball milling

et al. 2013

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Nanocrystalline calcium titanate (CT) ceramic has been synthesized by a combination of solid-state reaction and high-energy ball milling. This nano-ceramic is characterized by X-ray diffraction (XRD), dielectric study and impedance spectroscopy. The XRD pattern shows single phase ceramic of orthorhombic symmetry. The frequency-dependent dielectric study shows that the dielectric constant is maximized at low frequencies and decreases with an increase in frequency. Impedance spectroscopy analyses reveal a non-Debye type relaxation phenomenon. A significant shift in impedance loss peaks toward the higher-frequency side indicates conduction in the material favoring the long-range motion of mobile charge carriers. The grain conduction effect is observed from the complex impedance spectrum by the appearance of one semicircular arc in Nyquist plot. It is also observed that the resistance decreases with an increase in temperature showing a negative temperature coefficient of resistance (NTCR). Various thermistor parameters have been calculated by fitting with Steinhart-Hart equation. The modulus plots represent the presence of temperaturedependent electrical relaxation phenomenon with the material. The frequency-dependent AC conductivity at different temperatures indicates that the conduction process is thermally activated. The activation energy has been calculated from an Arrhenius plot of DC conductivity and relaxation frequency.

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Dielectric relaxation spectroscopy in poly(hydroxyethyl acrylates)/water hydrogels

Cited by 298 publications

References 32 publications

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Structural, mechanical and electrical characterization of epoxy-amine/carbon black nanonocomposites

Frequency and temperature dependent electrical characteristics of CaTiO3 nano-ceramic prepared by high-energy ball milling

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