Dielectric relaxation on Ba1−xBi2x/3Zr0.25Ti0.75O3 ceramic

Badapanda, T.; Senthil, V.; Rout, S. K.; Panigrahi, S.; Sinha, T. P.

doi:10.1016/j.matchemphys.2012.01.108

Cited by 60 publications

(14 citation statements)

References 43 publications

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“…It is indicated that the impedance of grains and grain boundaries are re- Figure 12. The impedance as a function of frequency for SBT-4Ce ceramics at selected temperatures: a) real and b) imaginary part duced, and there is electrode interface resistance, which releases the space charges [31]. However, the values of Z ′′ for all temperatures go through a period of ups and downs with increasing frequency, which are given in Fig.…”

Section: Analysis Of Dielectric Properties and Impedancementioning

confidence: 99%

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

et al. 2018

PAC

136

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Ce-doped strontium bismuth titanate (SrBi 4 Ti 4 O 15 , SBT) powders were prepared by glycine-nitrate process at 400-500°C and the ceramics were sintered at 980°C. The phase composition, morphology and electric properties were investigated. It was found that the calcined powders consist of a single phase SBT and the calcination temperature is lower than that for the conventional solid state method. The morphology of Cedoped SBT is flake-like and the layer size decreases with Ce-addition from 12 to 2 µm confirming that the addition of Ce 3+ inhibits grain growth. The Curie temperature of Ce-doped SBT increased for about 20°C compared to the pure SBT. The tan δ was ∼0.005 at 35°C and even below 0.05 up to 400°C. The temperature coefficient of dielectric constant was ∼0.012 and the rate of frequency change was 0.01-0.04, which indicated the high stability of dielectric properties of the Ce-doped SBT. Impedance analysis revealed that the conduction mechanism of the Ce-doped SrBi 4 Ti 4 O 15 ceramics is mainly grain conduction.

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Section: Analysis Of Dielectric Properties and Impedancementioning

confidence: 99%

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

et al. 2018

PAC

136

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“…Generally, there has been a noteworthy increase in the need of applications in tunable oscillators, filters, phase shifters, and antennas. In these devices, it is desirable to possess high tunability, moderate dielectric constant, and low dielectric loss [1,2]. Barium zirconium titanate (BZT), as an important member of BaTiO 3 -based family, has received extensive interest due to its prominent dielectric performance [3,4].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and microwave dielectric behavior of holmium substituted barium zirconium titanate ceramics

Sagar

Hudge

Madolappa

et al. 2012

Journal of Alloys and Compounds

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“…Since hopping frequency is directly proportional to its hopping probability, charge carriers in sample A have higher hopping probability than B. 50 This study shows that type of surfactant plays a major role in altering electric and dielectric properties of NiO nanocrystals.…”

Section: Discussionmentioning

confidence: 74%

Tweaking Electrical and Dielectric Properties of Nickel Oxide Nanocrystals by Varying the Surfactant

Maheswari¹,

Mohan²,

Sivakumar³

et al. 2015

j nanosci nanotechnol

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The influence of cationic cetyltrimethylammonium bromide (CTAB) and neutral polymeric polyvinylpyrrolidone (PVP) surfactants on electrical and dielectric properties of NiO nanocrystals is investigated. It is demonstrated that, compressive strain of nanocrystals is higher with PVP than that of CTAB. Consequently surfactant type has significant influence on intrinsic defects of nanocrystals. This is attributed to the difference in stabilization of metallic ions against agglomeration that leads to variation in rate of hydrolysis. Particularly, in the case of PVP assisted synthesis, higher stabilization leads to slow nucleation rate with lower defect density. As a result the hopping time of charge carriers decreases which in turn enhances the conductivity of nanocrystals as evidenced from the shifting of dielectric loss peak to higher frequency.

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Dielectric relaxation on Ba1−xBi2x/3Zr0.25Ti0.75O3 ceramic

Cited by 60 publications

References 43 publications

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

Electrical properties and microwave dielectric behavior of holmium substituted barium zirconium titanate ceramics

Tweaking Electrical and Dielectric Properties of Nickel Oxide Nanocrystals by Varying the Surfactant

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