2001
DOI: 10.1063/1.1336518
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Dielectric relaxation in flux grown KTiOPO4 and isomorphic crystals

Abstract: Articles you may be interested inThe dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film

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Cited by 27 publications
(21 citation statements)
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“…Above 190 1C, the superionic conduction dominates with an activation energy of 0.50 eV. This is the activation energy for one-dimensional hopping of the Rb + ions to adjacent vacancy sites, and it is in excellent agreement with the literature value of 0.51 eV [16]. At frequencies as high as 20 kHz, or on a short time scale, the Rb + ion can only commit a single jump backwards or forwards, being unrelated to the history of the jump sequence or the concentration of vacancies.…”
Section: Article In Presssupporting
confidence: 84%
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“…Above 190 1C, the superionic conduction dominates with an activation energy of 0.50 eV. This is the activation energy for one-dimensional hopping of the Rb + ions to adjacent vacancy sites, and it is in excellent agreement with the literature value of 0.51 eV [16]. At frequencies as high as 20 kHz, or on a short time scale, the Rb + ion can only commit a single jump backwards or forwards, being unrelated to the history of the jump sequence or the concentration of vacancies.…”
Section: Article In Presssupporting
confidence: 84%
“…At frequencies as high as 20 kHz, or on a short time scale, the Rb + ion can only commit a single jump backwards or forwards, being unrelated to the history of the jump sequence or the concentration of vacancies. Therefore, similarly high ac conductivities of the order of 10 À6 S/cm are reported ( [16,17] and this work) independently on the samples used. In contrast, at low frequencies or in the case of dc conductivity, the net Rb + migration distance in the direction of applied electric field is the result of many individual jumps summarized over a long period of time.…”
Section: Article In Presssupporting
confidence: 56%
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“…Physical properties of single crystals grown by top-seeded solution method were studied at the Ariel University Center of Samaria using the technique in [41][42][43]. Physical properties of single crystals grown by spontaneous flux crystallization were studied at the Faculty of Physics of the Moscow State University jointly with the Karpov Institute of Physical Chemistry [33].…”
Section: Single Crystalsmentioning
confidence: 99%
“…S/cm при 293 K [3][4][5][6][7][8][9][10]) в зависимо-сти от степени дефектности кристаллической решетки вследствие различных условий их выращивания. Моно-кристаллы KTiOPO 4 , получаемые из раствор-расплава методом Чохральского [11,12] и предназначенные для использования в области нелинейной оптики, харак-теризуются особо низкой концентрацией дефектов и большим электросопротивлением.…”
Section: Introductionunclassified