Dielectric properties of PZT thin films derived by a chemical solution-deposition process on steel substrates

Seifert, S.; Merklein, S.; Wahl, Sebastian; Sporn, D.

doi:10.1109/isaf.1996.602720

Cited by 2 publications

(1 citation statement)

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“…The initial results concerning an intermediate layer between undoped PZT sol-gel multilayers and the steel substrates have been published by Seifert et al 3 The aim of this work is to study the interface of sol-gel derived PZT on a commercially available Cr-Ni alloy, exposed to different thermal annealing treatments at temperatures up to 600°C. The influence of these thermal treatments on PZT sol-gel multilayer systems due to the formation of a non-ferroelectric or non-conductive interface between the metallic substrate and PZT film was investigated and related to the dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the interface of PZT sol–gel layers on metallic substrates

Dutschke

Meinhardt

2004

Surface & Interface Analysis

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Ferroelectric lead zirconate titanate layers can be used for several industrial applications. Usually they are prepared as thin films on silicon substrates with different ground electrodes to be integrated into microelectronic devices. Thin steel substrates are of special interest because of their flexibility which enables several new applications in sensors and actuators. These applications require a film thickness of several micrometres, which can be achieved by several coating and annealing steps.We have studied the interfaces of sol-gel derived PZT (53/47) layers on a commercially available Cr-Ni alloy in view of formation of secondary phases and diffusion processes, using transmission electron microscopy (TEM) combined with energy dispersive x-ray spectroscopy (EDX) and XPS. The effect of different thermal annealing treatments on the thickness of a non-ferroelectric interface containing NiO and NiCr 2 O 4 between the steel substrate and PZT film was studied. The diffusion of Cr from the metallic substrate into the PZT layer during the annealing process leads to formation of Pb 2 (CrO 4 )O at the interface. The results are related to the electrical properties of the films.

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Section: Introductionmentioning

confidence: 99%