Dielectric Properties of Lead Zirconate

Shirane, G.; Sawaguchi, E.; Takagi, Yutaka

doi:10.1103/physrev.84.476

Cited by 378 publications

(217 citation statements)

References 13 publications

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“…[50][51][52][53][54] Thermal annealing above T C or applying 'de-aging' or fatiguing bipolar excitation cycles of sufficient field can reverse the mechanisms responsible for aged, defect-mediated pinched P-E loops in "normal" ferroelectrics. [55][56][57] Such measurements were performed on Ba 4 La 0.67 Nb 10 O 30 (see ESI Figures S12-S15 for details).…”

Section: 8 46 47mentioning

confidence: 99%

Relaxor-to-Ferroelectric Crossover and Disruption of Polar Order in “Empty” Tetragonal Tungsten Bronzes

Gardner

Tang

et al. 2016

Chem. Mater.

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Combined temperature-dependent structural and electrical characterization of a series of "empty" ferroelectric tetragonal tungsten bronzes (TTBs) of composition Ba 4 (La 1-x Nd x ) 0.67 ! 1.33 Nb 10 O 30 are reported. The La-material exhibits a temperature dependent crossover from relaxor-ferroelectric to polar (but non-ferroelectric) to linear dielectric behavior. The loss of ferroelectric switching in the polar, non-ferroelectric phase is accompanied by disorder associated with structural relaxation due the significant vacancy concentration at the A1-perovskite-like site. In this disordered regime, large polarization can be re-established with application of sufficient electric field, however relaxation back into the disordered phase occurs on removal of the field as indicated by the loss of remenant polarization. The field against which "backswitching" (depolarization) occurs increases with temperature indicating increasing stability of the disordered regime. The disordered phase can be de-stabilized by substituting Nd for La at the A1-site and which reintroduces "normal" ferroelectric behavior. IntroductionThe field of polar dielectrics (piezo-, pyro-and ferro-electrics) is dominated by oxides with the perovskite structure.1, 2 The role of compositional tuning of perovskites and structural

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Section: 8 46 47mentioning

confidence: 99%

Relaxor-to-Ferroelectric Crossover and Disruption of Polar Order in “Empty” Tetragonal Tungsten Bronzes

Gardner

Tang

et al. 2016

Chem. Mater.

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“…Nevertheless its dielectric [33][34][35][36], piezoelectric [37] and structural [38][39][40] properties as well as the ones with \10% of PbTiO 3 [9] were studied as early as the 50s. The existence of a ferroelectric rhombohedral phase on a narrow range of temperature (503-506 K upon heating and 505-500 K upon cooling) between the paraand antiferroelectric phases was confirmed later [41][42][43] and a detailed study of the phase transitions by combined X-ray diffraction, dielectric and birefringence measurements determined the displacement of lead atoms (described by Kittel's theory of antiferroelectricity [44]) as well as the oxygen octahedra rotation [45].…”

Section: Temperature-composition Phase Diagrammentioning

confidence: 99%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

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Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead zirconate-lead titanate, Pb(Zr 1-x Ti x )O 3 , monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence of both iso-and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified on Pb(Zr 1-x Ti x )O 3 .

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“…The shape of the double hysteresis loop suggests applications in high-energy storage capacitors [6,7]. In addition, an effective electro-caloric effect can also be induced in systems with a large entropy change between the two phases [8].Lead zirconate PbZrO 3 (PZO) was the first material identified as antiferroelectric [9]. Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11].…”

mentioning

confidence: 99%

“…Lead zirconate PbZrO 3 (PZO) was the first material identified as antiferroelectric [9]. Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11].…”

mentioning

confidence: 99%

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Reyes‐Lillo

Rabe

2013

Phys. Rev. B

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Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3 % η 4 %. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin films is attributed to a combination of strain and depolarization field effects. [2,3] in that its structure is obtained through distortion of a nonpolar high-symmetry reference structure; for ferroelectrics the distortion is polar, while for antiferroelectrics it is nonpolar. However, not all nonpolar phases thus obtained are antiferroelectric; in addition, there must be an alternative ferroelectric phase obtained by a polar distortion of the same reference structure, close enough in free energy so that an applied electric field can induce a first-order phase transition from the antiferroelectric to the ferroelectric phase, producing a characteristic polarization-electric field (P-E) double-hysteresis loop. The electric-field-induced transition is the source of functional properties and promising technological applications. Non-linear strain and dielectric responses at the phase switching are useful for transducers and electrooptic applications [4,5]. The shape of the double hysteresis loop suggests applications in high-energy storage capacitors [6,7]. In addition, an effective electro-caloric effect can also be induced in systems with a large entropy change between the two phases [8].Lead zirconate PbZrO 3 (PZO) was the first material identified as antiferroelectric [9]. Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11]. In bulk form, PZO has a cubic perovskite structure at high temperatures and a nonpolar orthorhombic ground state below T c ∼ 505 K. The ground state has space group Pbam [12, 13] and unit cell dimensions √ 2a 0 × 2 √ 2a 0 × 2a 0 with respect to the reference lattice constant a 0 . Its distorted perovskite structure is derived from the cubic (C) unit cell through a nonpolar Σ 2 distortion mode of Pb +2 ion displacements in the 110 C direction, combined with oxygen octahedron rotation R − 5 modes around the 110 C axis (a − a − c 0 in Glazer notation). Under an applied electric field, PZO single crystals undergo a first order phase transition into a sequence of polar phases with rhombohedral symmetry [14]. Similar rhombohedral polar phases are observed in the polycrystalline ceramic system Pb(Zr 1−x Ti x )O 3 under small 5-10 % isovalent substitution of zirconium for titanium [15,16]. In thin films, the competition between the rhombohedral low-energy structures and the PZO ground state is less studied. Room temperature ...

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Dielectric Properties of Lead Zirconate

Cited by 378 publications

References 13 publications

Relaxor-to-Ferroelectric Crossover and Disruption of Polar Order in “Empty” Tetragonal Tungsten Bronzes

Relaxor-to-Ferroelectric Crossover and Disruption of Polar Order in “Empty” Tetragonal Tungsten Bronzes

Strain on ferroelectric thin films

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

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