1994
DOI: 10.1063/1.355993
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Dielectric properties of lanthanum gallate (LaGaO3) crystal

Abstract: Dielectric properties of single crystals of LaGaO3 have been measured at low frequencies as well as in the microwave region over a wide temperature range. Measurements performed on two crystal orientations, viz. (001) and (110), show dielectric anomalies at a transition near 145 °C. Dielectric anisotropy below, but not above, 145 °C confirm the previously reported orthorhombic symmetry at room temperature and rhombohedral symmetry above 145 °C. Domain wall motion which arises as a result of a phase transition … Show more

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Cited by 39 publications
(39 citation statements)
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“…5 compares GDC with nominally undoped CeO 2 . The room‐temperature dielectric constants of the undoped oxides, ∼25 (CeO 2 , extrapolated) and 20.9 (LaGaO 3 ), are also in reasonable agreement with published values (∼26–30 and ∼25, respectively) 4,50–53 . In all the cases (Figs.…”
Section: Resultssupporting
confidence: 89%
“…5 compares GDC with nominally undoped CeO 2 . The room‐temperature dielectric constants of the undoped oxides, ∼25 (CeO 2 , extrapolated) and 20.9 (LaGaO 3 ), are also in reasonable agreement with published values (∼26–30 and ∼25, respectively) 4,50–53 . In all the cases (Figs.…”
Section: Resultssupporting
confidence: 89%
“…From Table VI, it is clear that LaYbO 3 ceramics exhibit much lower Q × f r (∼21 500 GHz) than other La‐based perovskites such as LaGaO 3 (∼42 800 GHz) and LaAlO 3 (∼68 000 GHz). The values of Q × f r for LaGaO 3 single crystals are anisotropic (82 950 and 11 850 GHz, at perpendicular directions) 25 ; therefore, it is plausible that LaYbO 3 single crystals, with the same internal symmetry, may exhibit similar behavior. Nonetheless, an averaged Q × f r is expected for ceramics consisting of randomly oriented grains.…”
Section: Discussionmentioning
confidence: 99%
“…37 Such a good agreement between the microscopic (DFT) and the macroscopic (electrostatic) models, serves as a validation for the applicability of the P-B analysis developed in the rest of this section. We can now write the P-B equation for V •• O 's (charge +2e) in the LGO part of the heterostructure as…”
Section: Vacancy Distribution Using the Poisson-boltzmann Equa-tionmentioning
confidence: 99%