Dielectric properties of fullerene films

Su, Jiong-Guang; Chen, Y. F.; Chiu, Kuan−Cheng

doi:10.1063/1.123054

Cited by 8 publications

(4 citation statements)

References 15 publications

(16 reference statements)

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“…Relevant to these results are prior studies indicating that solid C 60 arrays rotate almost freely in a rotationally disordered high‐temperature, face‐centered cubic phase (above 260 K at atmospheric pressure). This motion is said to slow down and is transformed into a ratcheting or rocking motion in an orientation‐ordered simple cubic phase at low temperatures and high pressures . Su et al demonstrated a structural phase transition at 260 K as well as an anomaly at 90 K resulting from a glass transition.…”

Section: Resultsmentioning

confidence: 99%

“…This motion is said to slow down and is transformed into a ratcheting or rocking motion in an orientation-ordered simple cubic phase at low temperatures and high pressures. [38][39][40] Su et al 38,39 demonstrated a structural phase transition at 260 K as well as an anomaly at 90 K resulting from a glass transition. Furthermore, these investigators observed a Debye-like relaxation in the dielectric response, e 0 and tan d versus f curves at three temperatures for C 60 (OH) 29 and Sc 3 N@C 80 (OH) 18 are provided in Figures 3 and 4, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites

Ahmed

Hassan

Mauritz

et al. 2014

J of Applied Polymer Sci

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Polymer–fullerene nanocomposites consisting of linear polyurethane (PU) chains crosslinked via increasing loadings of polyhydroxylated fullerenes (C60 and Sc3N@C80, a metallic nitride fullerene) were prepared and characterized for their mechanical and dielectric properties using dynamic mechanical analysis (DMA) and broadband dielectric spectroscopy (BDS). Fullerene–polymer networks [C60‐PU and Sc3N@C80‐PU] having high gel fractions, good mechanical properties and thermal stabilities were produced. Polyhydroxylated fullerenes C60(OH)29 and Sc3N@C80(OH)18 were synthesized in high yield through a high‐speed vibration milling method and characterized using FTIR, matrix‐assisted laser desorption/ionization mass spectroscopy, and thermal gravimetric analysis. DMA of fullerene–PU networks indicates Tg ∼ −50°C, with a sub‐Tg relaxation due to local chain motions. BDS analyses of the fullerenes, before and after hydroxylation and before incorporation into the networks, revealed one relaxation and large real permittivity (ε′) values for C60(OH)29 relative to C60. Analogous samples for Sc3N@C80 exhibit two relaxations, where the extra relaxation is attributed to motions of the cage‐encapsulated Sc3N clusters. ε′ values for Sc3N@C80‐PU at a given frequency are higher than corresponding values for C60‐PU, likely because of the rotationally mobile Sc3N encapsulates. Surface and bulk resistivities of fullerene–PU networks were found to have a modest dependence on relative humidity. Capacitance versus voltage characteristics of the fullerene–PUs were also studied in the range of the applied dc bias voltage of −30 to +30 v. It is generally concluded, based on all the evidence that this class of materials can be rendered quite polarizable and could be used as high dielectric permittivity materials in capacitance applications. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40577.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites

Ahmed

Hassan

Mauritz

et al. 2014

J of Applied Polymer Sci

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“…8,9 Su et al 10 observed Debye-like relaxation peaks and extracted an activation energy of 277 meV. However, from the temperature-dependant complex permittivity of C 60 ͑111͒ epitaxial films Fartash 11 detected signs of the order-disorder transition, but none for any glass transition in the ranges of temperature and frequency of his measurements.…”

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confidence: 93%

Influence of grain boundaries on the glass-transition behavior in C60 films

Bao

et al. 2006

Applied Physics Letters

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Articles you may be interested inMono-textured nanocrystalline thin films with pronounced stress-gradients: On the role of grain boundaries in the stress evolution Intrinsic stress in ZrN thin films: Evaluation of grain boundary contribution from in situ wafer curvature and ex situ x-ray diffraction techniques Dependence of film texture on substrate and growth conditions for CdTe films deposited by close-spaced sublimation J.Solid C 60 doped with C 70 : Order-to-disorder transition studied with dielectric and 13 C nuclear magnetic resonance spectroscopies J. Appl. Phys. 95, 4093 (2004); 10.1063/1.1687048Disorder/order phase transition in C 60 thin films studied by surface photovoltage spectroscopy

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“…Nevertheless, the chemical process may be more complex since several -bonds of fullerenes may participate in the surface reactions simultaneously, depending on the adsorption sites and the electron delocalization. Fullerene-based precursors may be potentially useful to serve as low-k materials 39 or surface passivation agents upon deposition on semiconductor surfaces due to their unique structural and electronic characteristics. The main advantage of fullerenes lies in their high volumes with ample space within the spheres, their low polarizability and excellent thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Zhou

Ning

et al. 2007

Challenges and Advances in Computational Chemistry and Physics

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Abstract:Development of novel chemistry on semiconductor surfaces is an area of increasing research interests due to its technological importance. The possibility of depositing fullerenes on semiconductor surfaces via the formation of stable chemical bonds provides an opportunity to design and develop novel materials that meet the increasing stringent technology challenge. In this chapter, we review recent advances in the theoretical modeling of fullerene chemisorption on GaAs and Si surfaces. We show that strong covalent chemical bonds can be formed upon deposition of fullerenes of various sizes on these surfaces, forming well-ordered thin films. The chemical/physical properties of such thin films can be tailored by using different sizes of fullerenes

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Dielectric properties of fullerene films

Abstract: Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Cited by 8 publications

References 15 publications

Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites

Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites

Influence of grain boundaries on the glass-transition behavior in C60 films

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

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Dielectric properties of fullerene films

Abstract: Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Cited by 8 publications

References 15 publications

Dielectric properties of C60 and Sc3N@C80 fullerenol containing polyurethane nanocomposites

Dielectric properties of C60 and Sc3N@C80 fullerenol containing polyurethane nanocomposites

Influence of grain boundaries on the glass-transition behavior in C60 films

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

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Product

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Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites

Dielectric properties of C₆₀ and Sc₃N@C₈₀ fullerenol containing polyurethane nanocomposites