Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method

Dielectric tunability of highly (l00)-oriented Fe-doped Na0.5Bi0.5TiO3 thin film

“…This suggests that grain growth is limited more and more seriously with the increasing content of ion-doping, which is also been observed in the other thin films such as Mn-doped BiFeO 3 and Fe-doped Ba 0.65 Sr 0.35 TiO 3 thin films [13,14].…”

Enhanced ferroelectric and dielectric properties of Nb5+-doped Na0.5Bi0.5TiO3 thin film deposited under nitrogen annealing atmosphere

“…Also, at 100 kHz, the NBTNb thin film annealed under N 2 possesses the biggest ε r of 402 and the smallest tanδ of 0.065. As known that, the microstructure affects the performance significantly [20]. The biggest ε r for NBTNb thin film under N 2 can be ascribed to the largest grain sizes and few voids as can be seen from Fig.…”

Annealing temperature‐dependent piezoelectric properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin films

“…As for dielectric and loss properties shown in Fig. 5, with the increase of annealing temperature, the ε r values steeply increase in the range of 600–700 °C due to the improvement of surface morphology and crystalline, while decrease above 700 °C due to the insufficient Bi supply 20–24. In the case of the 2 P r , 2 P s , d 33 as a function of annealing temperature shown in Fig.…”

“…On the other hand, the values of ε r and tan δ at 1 kHz are 411, 550, 702, 679, and 0.041, 0.027, 0.022, 0.026 for BNT thin film annealed at 600, 650, 700, and 750 °C, respectively, and with the increase of annealing temperature the variations of ε r and tan δ are as same as those of 2 P r and 2 P s , obviously. The increase of ε r values (600–700 °C) is induced by the grain size effect on dielectric properties of polycrystalline thin films, while the decrease of ε r values above 700 °C is due to the insufficient Bi supply which results in nonstoichiometric structural defects in the BNT thin films 23. The decrease of tan δ with the increase of annealing temperature (600–700 °C) is due to the mobile oxygen vacancy affected by the annealing temperature 24, while the tan δ increase above 700 °C may be due to the insufficient Bi supply.…”