Dielectric properties of europium–indium oxide solid solution films prepared on Si (100) substrates

Dakhel, A.A.

doi:10.1016/j.jpcs.2004.06.001

Cited by 24 publications

(5 citation statements)

References 26 publications

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“…So, increasing the frequency of the applied field improves the charge carrier's hops between the localized states. This behavior is in good agreement with other published studies [36,37].…”

Section: ( ) ( ) S W W =supporting

confidence: 93%

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

et al. 2022

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AC conductivity and dielectric characteristics of disodium phthalocyanine (Na2Pc) in a pellet form were investigated in a frequency range from 45Hz to 3.12 MHz and a temperature range from 303 to 423 K. The charge carrier transport mechanism was determined according to the correlated barrier hopping model (CBH). Also, the electrical parameters were estimated in light of this model. The thermal activation energy of AC conductivity was decreased with increasing frequency. The behavior dependence of dielectric loss and dielectric constant on temperature and frequency was discussed. The behavior of dielectric loss was explained based on the Giuntini model. The maximum value of barrier height, WM, was obtained to equal 0.38 eV. The results showed that the type of relaxation mechanism is a non-Debye one. The activation energy is calculated for dielectric relaxation to be 0.36 eV.

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“…So, increasing the frequency of the applied field improves the charge carrier's hops between the localized states. This behavior is in good agreement with other published studies [36,37].…”

Section: ( ) ( ) S W W =supporting

confidence: 93%

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

et al. 2022

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“…The obtained value of W M is equal to 170 meV. Generally, the experimental value of W M is equal or less than band gap energy (E g ) of the material which reflects the influence of the sample structure, such as grain size and orientation, defect distribution, phase content, Urbach tailing phenomenon and charge density [60,61]. At low frequencies, the conductance G is frequency independent and equal to the value G dc .…”

Section: Electrical Propertiesmentioning

confidence: 96%

Some physical investigations on In2S3:Sn sprayed thin film

Kraini

Bouguila

Bettaibi

et al. 2016

J Mater Sci: Mater Electron

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Tin doped In 2 S 3 film was grown by chemical spray pyrolysis method using compressed air as a carrier gas. Structural, morphological, optical and electrical properties of film have been investigated. X-ray diffraction shows well crystallized film according to cubic b-In 2 S 3 phase. The FESEM photograph reveals that the film is dense without pinholes. The average surface roughness and the root-mean square roughness are about 18 and 14 nm, respectively. Optical transmission is more than 60 % in visible region and 85 % in infrared one. Direct band gap energy of 2.62 eV has been found. The impedance plane plot shows semicircle arcs and an electrical equivalent circuit has been proposed to explain the impedance results. We have performed ac and dc conductivity studies inspired from Jonscher and correlated barrier-hopping models. These studies helped establishing significant correlation between temperature and activation energy. From the impedance spectroscopy analysis, we investigated the frequency relaxation phenomenon and the equivalent circuit of such thin film.

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“…Figures 7(a) and (b) demonstrate that if the lifetime (τ) of the interface states (τ=C it R it , where R it is the resistance associated with the interface states) is lower than the applied voltage frequency (1/ω), the states can easily respond and contribute measured capacitance values at lower frequencies. However, the interface states do not have enough time to follow the applied frequencies at higher frequencies, hence, the contribution to the measured capacitance is almost zero [7,45,46]. The higher C it value causes high variations in the capacitance values under frequency dispersion.…”

Section: Frequency-dependent Electrical Propertiesmentioning

confidence: 99%

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Lök

Kaya

Yılmaz

2018

Semicond. Sci. Technol.

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In this work, the thermal phase separation and annealing optimization of ZrSiO 4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO 4 /p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance-voltage (C-V ), conductance-voltage (G/ω) and leakage-current-voltage (I g -V g ).The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO 2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO 2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO 4 . This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71×10 10 and the number of border traps decreased to 7.18×10 10 cm −2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10 −9 Acm −2 to 10 −6 Acm −2 . The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO 4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO 4 /Si interface. The barrier height of the device varies slightly from 0.776 eV to 0.827 eV under frequency dispersion. Briefly, it is concluded that the devices annealed at 1000 °C exhibit promising electrical characteristics.

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Dielectric properties of europium–indium oxide solid solution films prepared on Si (100) substrates

Cited by 24 publications

References 26 publications

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

Some physical investigations on In2S3:Sn sprayed thin film

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

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Dielectric properties of europium–indium oxide solid solution films prepared on Si (100) substrates

Cited by 24 publications

References 26 publications

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

Electrical conduction mechanism and dielectric relaxation of bulk disodium phthalocyanine

Some physical investigations on In2S3:Sn sprayed thin film

Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

Contact Info

Product

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Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors