2021
DOI: 10.1016/j.jallcom.2021.159861
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Dielectric properties of CaCu3Ti4O12 ceramics doped with aluminium and fluorine

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Cited by 32 publications
(21 citation statements)
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“…Without ferroelectric effects, titanate-based ceramics give a very high ε′ value . In a number of scientific articles, the major cause of the high ε′ in these ceramics has been identified. These compounds are composed of the two components of grains and grain boundaries (GBs), which are consistent with the internal barrier layer capacitor (IBLC) model. The semiconducting properties of the ACTO grains originate from electron hopping between Cu + ↔ Cu 2+ and Ti 3+ ↔ Ti 4+ . The presence of Cu + and Ti 3+ in the ACTO lattice is induced by anion vacancies like oxygen sites, as previously reported. , Due to the specific microstructure, the ε′ value of ACTO ceramics is proportional to their grain size.…”
Section: Introductionmentioning
confidence: 80%
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“…Without ferroelectric effects, titanate-based ceramics give a very high ε′ value . In a number of scientific articles, the major cause of the high ε′ in these ceramics has been identified. These compounds are composed of the two components of grains and grain boundaries (GBs), which are consistent with the internal barrier layer capacitor (IBLC) model. The semiconducting properties of the ACTO grains originate from electron hopping between Cu + ↔ Cu 2+ and Ti 3+ ↔ Ti 4+ . The presence of Cu + and Ti 3+ in the ACTO lattice is induced by anion vacancies like oxygen sites, as previously reported. , Due to the specific microstructure, the ε′ value of ACTO ceramics is proportional to their grain size.…”
Section: Introductionmentioning
confidence: 80%
“…It is anticipated that in the not-too-distant future, the basis for the development of energy storage and memory devices will involve the use of giant dielectric materials that have a high dielectric permittivity (ε′). Having a large ε′, CaCu 3 Ti 4 O 12 (CCTO) and its associated ACu 3 Ti 4 O 12 (ACTO) (A = Y 2/3 , Na 1/2 Sm 1/2 , Cd, Na 1/3 Cd 1/3 Y 1/3 , and Na 1/3 Cd 1/3 Bi 1/3 ) are favored by researchers due to their exceptional temperature stability and frequency stability. These properties are of utmost importance for developing new technologies for electronic devices. Simple oxide systems such as oxide- and TiO 3 -based ceramics have exhibited a good prospect to be employed as indispensable parts of our home appliances, for example, as capacitors, varistors, and sensors.…”
Section: Introductionmentioning
confidence: 99%
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“…According to prior studies, the substitution of metallic ions into the CCTO lattice has been found to lead to a decrease in the tanδ value [4][5][6]. The chosen methodology for experimentally validating this hypothesis involved the substitution of metal ions into the CCTO lattice.…”
Section: Introductionmentioning
confidence: 99%
“…The ceramic material with the chemical formula CaCu 3 Ti 4 O 12 , also known as CCTO, has a remarkably high dielectric permittivity (10 3  10 5 ) when measured in the low-frequency region [1][2][3][4][5][6]. This unique characteristic renders CCTO a highly intriguing advanced ceramic material worthy of further study and exploration [1][2][3][4][5][6]. According to Sinclair and colleagues, the cause of high  could potentially be attributed to an extrinsic factor, specifically the microstructure [1].…”
Section: Introductionmentioning
confidence: 99%