Dielectric Properties of CaCu₃Ti₄O₁₂Ceramic Thin Films

Abstract

In CaCu 3 Ti 4 O 12 (CCTO), the ceramic material with the highest dielectric permittivity ever reported in a broad frequency and temperature range, the origin of such high permittivity has been attributed to 'electrical' heterogeneities in the microstructure. Dielectric investigations of CCTO ceramic thin films, performed in a broad temperature and frequency range, and the analysis in terms of the equivalent circle reveal that (i) each of the two constituents, insulating grain boundaries and semiconducting bulk grains, individually determines the dielectric behaviour of CCTO and (ii) manipulating the conditions under which CCTO ceramic thin films are prepared enables control of their dielectric properties.

Dielectric properties and energy storage performance of CCTO/polycarbonate composites: influence of CCTO synthesis route

“…Since pure CCTO's breakdown strength is quite low, no more than 7 kV/cm [16], thin films of pure CCTO [17,18] are not viable for dielectric energy storage. Many recent studies [19][20][21][22][23][24][25][26][27][28][29][30] have explored CCTO-based polymer composites, hoping to take advantage of the facile processing methods and better mechanical properties afforded by polymer as well as CCTO's high e r values.…”

The effect of processing conditions on the dielectric properties of doped calcium lanthanum nickelate

“…In the lanthanum-strontium nickelate, this characteristic is frequency-and temperature independent, which makes this material promising for practical applications (ε ~ 10 5 -10 6 ) [3,4]. In ceramic samples and thin films of CaCu3Ti4O12 and La15/8Sr1/8NiO4, the dielectric constant has a lower value and decreases with an increase in the frequency of the electric field [3,5]. It was found that the ceramics obtained by the thermobaric method have better dielectric characteristics in comparison with those of the samples obtained by the ceramic technology at atmospheric pressure [6,7].…”