Dielectric Properties of Boron Nitride in THz Region Synthesized with Nonenergetic CVD

Abstract

Pyrolytic boron nitride (pBN) was prepared with a nonenergetic chemical vapor deposition. Two tests were performed (i) short time deposition to investigate rate and volume deposition of injected reaction gases and (ii) long time deposition to characterize possible qualitative differences of the formed BN layer. SEM, XRD, FTIR, Raman spectroscopy, and Terahertz time‐domain spectroscopy proved that there are small qualitative differences in the pBN deposited at various distances from the blast pipe. The quality of the phase synthesized was resolved with highly sensitive THz‐TDS technique, the index of refraction npBN varied at 2.0 THz (66.6 cm) from 2.018 ± 0.003 to 2.124 ± 0.005.