1995
DOI: 10.1016/0013-4686(94)00330-4
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Dielectric properties of anodic oxide films on tantalum

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Cited by 108 publications
(70 citation statements)
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“…The relative dielectric constant of Ta 2 O 5 film is reported to be dependent on the thickness but is 18.5 for thin anodic oxide films of less than 19 nm. 46 The experimentally observed value is in good agreement with this value, confirming the nanosized dots prepared in this study have dielectric properties similar to Ta 2 O 5 .…”
Section: Resultssupporting
confidence: 87%
See 1 more Smart Citation
“…The relative dielectric constant of Ta 2 O 5 film is reported to be dependent on the thickness but is 18.5 for thin anodic oxide films of less than 19 nm. 46 The experimentally observed value is in good agreement with this value, confirming the nanosized dots prepared in this study have dielectric properties similar to Ta 2 O 5 .…”
Section: Resultssupporting
confidence: 87%
“…45 It is quite interesting that the growth rate of the present nanosized Ta oxide dot pattern ͑ϳ1.23-1.69 nm/V͒ is comparable to the growth rate of the tantalum anodic oxide ͑ϳ1.7 nm/V͒. 46,47 Thus, it is reasonable to consider that the growth mechanism for the nanosized oxide is electrochemical anodic oxidation as schematically shown in Fig. 1.…”
Section: Resultsmentioning
confidence: 63%
“…26) Surface roughness, inhomogeneous composition, and reaction rate variation depending on the plane orientation are the major contribution to CPE. [27][28][29] Fig. 4 shows imaginary part of admittance as a function of angular frequency, ω (= 2πf), in the frequency range of 1 Hz~1 kHz.…”
Section: Resultsmentioning
confidence: 99%
“…where εr is the dielectric constant of the passive film (~60 [44] for TiO2 and ~25 [45] for Ta2O5), ε0 is the vacuum permittivity (8.854 × 10 −14 F•cm −1 ), q is the elementary charge (+e for electrons and −e for holes), Nq is the density of charge carriers (Nd for donors and Na for acceptors), E is the applied potential, Efb is the flat band potential, k is the Boltzmann constant (1.38 × 10 −23 J•K −1 ), and T is the absolute temperature (310 K). Figure 9 presents the Mott-Schottky plots for the passive films formed on the β-Ta coating, uncoated Ti-6Al-4V and commercially pure Ta potentiostatically polarized at 0.8 V for 1 h in Hank's …”
Section: Mott-schottky Analysismentioning
confidence: 99%