Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure

Mumlyakov, Alexander; Шибалов, М.В.; Trofimov, I. V.; Verkholetov, Maksim G.; Орлов, А. П.; Diudbin, G D; Evlashin, Stanislav A.; Nekludova, P.A.; Anufriev, Yu.V.; Tagachenkov, A. M.; Zenova, E. V.; Tarkhov, M. A.

doi:10.1016/j.jallcom.2020.157713

Cited by 4 publications

(1 citation statement)

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“…Additionally, hafnium oxide has numerous advantages. Foremost among these are the high values of dielectric constant k = 20-25 and a band gap ∼5.68 eV [23]. Currently, there is not any information on the influence of the thickness of oxide hafnium buffer layer on the superconductive properties of NbN films in the literature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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The influence of the buffer layer of hafnia dielectric (HfO 2 ) on superconducting properties of niobium nitride films (NbN), produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensive analysis of morphological, microstructural, and electrophysical parameters of thin NbN films. The dependence of transition critical temperature from the thickness of the HfO 2 buffer layer has been obtained. For the first time, it has been demonstrated that the superconducting properties of niobium nitride films at the HfO 2 buffer layer have high superconductive parameters, namely, Т c ~ 13 K (at the film thickness of approximately 30 nm) and high critical current density of approximately 10 7 A/cm 2 . The relation between the thickness of the HfO 2 buffer layer with the critical current density of niobium nitride films has been determined. It appeared that the values of critical current density increase significantly up to 13 MA/cm 2 when the thickness of the hafnia buffer layer is more than 2 nm.

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Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Mumlyakov¹,

Шибалов²,

Timofeeva³

et al. 2021

Carbon

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Measurement of the Thermal Conductivity of Carbon Nanowalls by the 3ω Method

et al. 2023

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Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure

Cited by 4 publications

References 23 publications

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Measurement of the Thermal Conductivity of Carbon Nanowalls by the 3ω Method

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Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure

Cited by 4 publications

References 23 publications

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Measurement of the Thermal Conductivity of Carbon Nanowalls by the 3ω Method

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Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer