Dielectric polarization, anisotropy and nonradiative energy transfer into nanometre-scale thin semiconducting films

Gordon, Jeffrey N.; Gartstein, Yuri N.

doi:10.1088/0953-8984/25/42/425302

Cited by 21 publications

(37 citation statements)

References 35 publications

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“…Prins et al examined the ET between CdSe QDs and MoS 2 of different thicknesses. 201 Similar to the graphene-QD system, the ET rate from QDs to the 2D semiconductor MoS 2 can be also modulated through the The device gives a PL modulation efficiency of 75% and the authors believe the method can be extended to other QD/2D semiconductor combinations. 16).…”

Section: Et Involving 2d Materialsmentioning

confidence: 99%

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

2015

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Transfer of energy occurs endlessly in our universe by means of radiation. Compared to energy transfer (ET) in free space, in solid state materials the transfer of energy occurs in a rather confined manner, which is usually mediated by real or virtual particles, including not only photons, but also electrons, phonons, and excitons. In the present review, we discuss the recent advances in optical ET by resonance mediated with photons in solid materials as well as their nanoscale counterparts, with focus on the photoluminescence behavior pertaining to ET between optically active centers, such as rare earth (RE) ions. This review begins with a brief discussion on the classification of optical ET together with an overview of the theoretical formulations and experimental method for the examination of ET. We will then present a comprehensive discussion on the ET in practical systems in which normal photoluminescence, upconversion and quantum cutting resulted from ET involving metal ions, QDs, organic species, 2D materials and plasmonic nanostructures. Diverse ET systems are therefore simply categorized into cases of ion-ion interactions and non-ion interactions. Special attention has been paid to the progress in the manipulation of spatially confined ET in nanostructured systems including core-shell structures, as well as the ET in multiple exciton generation found in QDs and organic molecules, which behave quite similarly to resonance ET between metal ion centers. Afterwards, we will discuss the broad spectrum of applications of ET in the aforementioned systems, including solid state lighting, solar energy utilization, bio-imaging and diagnosis, and sensing. In the closing part, along with a short summary, we discuss further research focus regarding the problems and possible future directions of optical ET in solids.

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Section: Et Involving 2d Materialsmentioning

confidence: 99%

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

2015

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“…On the other hand, materials such as MoS 2 , WS 2 , and InAs will show FRET that becomes weaker as the layer thickness is increased . Furthermore, Gartstein et al theoretically investigated and compared both macroscopic analyses by considering an acceptor slab having a complex dielectric function (i.e., CPS theory) and direct modeling, which considered discrete acceptor layers as polarizable point dipoles . In both models, non‐additivity (non‐monotonic behavior) in FRET efficiencies is observed as a function of the acceptor layer thickness, especially when the polarizability of the acceptor layer is relatively high (e.g., ε ′ > 7 and ε ″ = 0.2).…”

Section: Two‐dimensional Materials As Efficient Exciton Sinksmentioning

confidence: 99%

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Güzeltürk

Demir

2016

Adv Funct Materials

103

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wileyonlinelibrary.comtelecommunications. Conventional optoelectronics relies on high-temperature, gas-phase, epitaxy-grown semiconductors such as III-V compounds, [1,2] which make a mature materials technology. However, high-thermal budget, high-cost, and a limited set of substrates, which are CMOS-incompatible, hamper their use in versatile platforms, including flexible surfaces and large-area applications. Besides, the last decade has witnessed the rise of alternative low-dimensional semiconductor materials such as colloidal semiconductor nanocrystals, [3] organic semiconductors [4,5] and more recently, two-dimensional (2D) semiconductors. [6] These materials offer advantages over conventional semiconductors thanks to their low cost and low thermal budget growth, solution processability, and roll-to-roll fabrication on arbitrary substrates on a large scale. These materials are expected to impact a broad range of applications in optoelectronics and electronics.In bulk and weakly confined semiconductors, the excited electronic state is typically in the form of free electron-hole pairs due to weak Coulomb interaction energy (∼10 meV). [7] On the other hand, in low-dimensional nanoemitters, the excited state is essentially in the form of strongly bound electron-hole pairs (i.e., excitons) with large Coulomb interaction energy (10 meV) thanks to strong quantum confinement [8] and large dielectric screening, [9,10] allowing for strong light-matter interactions. Thus, in these nanoemitters, it becomes central to control excitonic interactions including exciton transfer, diffusion, trapping, dissociation, annihilation, and radiative recombination to accomplish the desired photonic properties and maximize optoelectronic performance.As it naturally happens in photosynthetic light-harvesting complexes, efficient and directed exciton flow is highly desired in semiconductor nanostructures. To this end, mastering exciton flow at the nanoscale through near-field nonradiative energy transfer has proven vital to accomplish efficient light generation and light utilization using nanoemitters and their hybrid nanostructures. [7,[11][12][13][14][15] In this feature article, we highlight recent developments in the field of energy transfer materials for optoelectronics. We review new insights on the near-field nonradiative transfer in excitonic nanoemitter systems. Our main focus is on hybrid systems comprising colloidal nanocrystals, and 2D and organic semiconductors. Also, Effective utilization of excitation energy in nanoemitters requires control of exciton flow at the nanoscale. This can be readily achieved by exploiting nearfield nonradiative energy transfer mechanisms such as dipole-dipole coupling (i.e., Förster resonance energy transfer) and simultaneous two-way electron transfer via exchange interaction (i.e., Dexter energy transfer). In this feature article, we review nonradiative energy transfer processes between emerging nanoemitters and exciton scavengers. To this end, we highlight the potential of colloidal semiconduct...

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“…The authors of ref. [30] use a bulk dielectric permittivity to describe the optical response of the MoS 2 and they attribute the decreasing behavior to dielectric screening [45]. In particular, they found that, by increasing the thickness of the MoS 2 slab, the field intensity created by a dipole source on the slab drops.…”

Section: B Spontaneous Emission In the Presence Of A Single Mos 2 Layermentioning

confidence: 99%

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

et al. 2016

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The total spontaneous emission rate of a quantum emitter in the presence of an infinite MoS 2 monolayer is enhanced by several orders of magnitude, compared to its free-space value, due to the excitation of surface exciton polariton modes and lossy modes. The spectral and distance dependence of the spontaneous emission rate are analyzed and the lossy-surface-wave, surface exciton polariton mode and radiative contributions are identified. The transverse magnetic and transverse electric exciton polariton modes can be excited for different emission frequencies of the quantum emitter, and their contributions to the total spontaneous emission rate are different. To calculate these different decay rates, we use the non-Hermitian description of light-matter interactions, employing a Green's tensor formalism. The distance dependence follows different trends depending on the emission energy of quantum emitter. For the case of the lossy surface waves, the distance dependence follows a z −n , n = 2, 3, 4, trend. When transverse magnetic exciton polariton modes are excited, they dominate and characterize the distance dependence of the spontaneous emission rate of a quantum emitter in the presence of the MoS 2 layers. The interaction between a quantum emitter and a MoS 2 superlattice is investigated and we observe a splitting of the modes supported by the superlattice. Moreover, a blue shift of the peak values of the spontaneous emission rate of a quantum emitter is observed as the number of layers is increased. The field distribution profiles, created by a quantum emitter, are used to explain this behavior.

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Dielectric polarization, anisotropy and nonradiative energy transfer into nanometre-scale thin semiconducting films

Cited by 21 publications

References 35 publications

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

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