Dielectric, modulus and impedance analysis of lead-free ceramics Ba0.8La0.133Ti1−x Sn x O3 (x=0.15 and 0.2)

Rhouma, F.I.H.; Dhahri, Ah.; Dhahri, J.; Valente, M.A.

doi:10.1007/s00339-012-6935-1

Cited by 55 publications

(15 citation statements)

References 39 publications

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“…The increase in conductivity at high temperature may be attributed to the hopping mechanism of thermally activated charge carriers. 22 After the identification of LFP as a better cathode material for LIBs by Goodenough et al, 23 in 2001, Prosini et al reported that the addition of fine particles of carbon black during the synthesis of LiFePO 4 can greatly improve the electrochemical performance. The composite material so obtained is conductive and no additional carbon black needs to be added during the electrode preparation.…”

Section: Resultsmentioning

confidence: 99%

Electrochemical Analysis of the Carbon-Encapsulated Lithium Iron Phosphate Nanochains and Their High-Temperature Conductivity Profiles

et al. 2018

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Carbon-encapsulated LiFePO 4 (LFP) nanochains were prepared as a cathode material for lithium batteries by sol–gel method using citric acid as the carbon source. The prepared LFP/C material is characterized by structural, morphological, and electrochemical characterization. LFP/C shows an orthorhombic olivine structure with “ Pnma ” space group having an average particle size of 50 nm. The uniform distribution of LFP particles coated by the carbon matrix as a nanochain array has been analyzed by scanning electron microscopy and transmission electron microscopy analysis of the sample. The electrochemical performance of the LFP/C nanochain has been analyzed using galvanostatic cycling, cyclic voltammetry, and impedance analysis of the assembled batteries. The sol–gel-derived LFP/C nanochain exhibits better capacity and electrochemical reversibility in line with the literature results. The high-temperature conductivity profile of the sample has been recorded from room temperature to 473 K using impedance analysis of the sample. The transport dynamics have been analyzed using the dielectric and modulus spectra of the sample. A maximum conductivity up to 6.74 × 10 –4 S cm –1 has been obtained for the samples at higher temperature (448 K). The nucleation and growth at higher temperature act as factors to facilitate the intermediate phase existence in the LiFePO 4 sample in which the phase change that occurs above 400 K gives irreversible electrochemical changes in the LFP/C samples.

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Section: Resultsmentioning

confidence: 99%

Electrochemical Analysis of the Carbon-Encapsulated Lithium Iron Phosphate Nanochains and Their High-Temperature Conductivity Profiles

et al. 2018

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“…The results are calculated by Nicollian and Brews method in strong accumulation region [22]: The dielectric properties of the device are examined by dielectric spectroscopy. In dielectric spectroscopy, the complex permittivity ε * is given by [23][24][25][26]…”

Section: Resultsmentioning

confidence: 99%

“…where ε' is the real part of dielectric permittivity that is a measure of the energy stored in dielectric material and ε" is imaginary part of dielectric permittivity that is a measure of the energy dissipated in dielectric material. The complex permittivity is as following [23][24][25][26]…”

Section: Resultsmentioning

confidence: 99%

Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Yıldız¹,

Tataroğlu²

2022

Preprint

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The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor phase epitaxy (HVPE) technique. Au/Ti contact was thermally evaporated on AlN thin film. Thus, admittance measurements (Y=G+iωC) of the fabricated device were performed and analyzed for frequencies ranging from 1 kHz to 1000 kHz and at room temperature. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics shown a strong frequency dependence. This behavior is associated with the reaction of the interface traps to the applied ac signal. Also, the dielectric parameters, conductivity, and electric modulus of the device were extracted from capacitance and conductance data. The obtained results suggest that the prepared device can be used as a capacitor in electronic circuits.

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“…The dielectric spectroscopy method has been commonly used to determine the dielectric properties of MS and MIS structures in the literature [35,36]. The * is the most basic point in this method and it is defined with the formula below [33,34]:…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Demir

Yücedağ

Altındal³

2020

Sakarya University Journal of Science

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In this study, we investigated the fabrication of Au/n-SiC (MS) and Au/Al2O3/n-SiC (MIS) type structures with atomic layer deposition (ALD) technique and their dielectric properties. The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a (-3V)-(9V) bias voltage at 300 K. The significant dielectric parameters such as dielectric constant (ε') and dielectric loss (ε"), real and imaginary parts of electrical modulus (M' and M"), loss tangent (tan) were calculated by depending on frequency and voltage from capacitance-voltage (C-V) and conductance-voltage (G/-V) data. Thereby, the effect of frequency on MS and MIS was searched in detail. The effect of the interface states occurred in the low frequency region can be attributed to the variation of the characteristic behavior of these parameters. It is clear that the dielectric parameters highly depend on the frequency and voltage at depletion and accumulation regions. Moreover, the peak position of M shifts to the left side of the graphic due to the effect of the insulating layer. It can be deduced from the obtained results that the interfacial polarization is easier at low frequencies. Also the interfacial polarization can contribute more to the variation of the dielectric properties.

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Dielectric, modulus and impedance analysis of lead-free ceramics Ba0.8La0.133Ti1−x Sn x O3 (x=0.15 and 0.2)

Cited by 55 publications

References 39 publications

Electrochemical Analysis of the Carbon-Encapsulated Lithium Iron Phosphate Nanochains and Their High-Temperature Conductivity Profiles

Electrochemical Analysis of the Carbon-Encapsulated Lithium Iron Phosphate Nanochains and Their High-Temperature Conductivity Profiles

Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

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