Dielectric Modulated Biosensor Architecture: Tunneling or Accumulation Based Transistor?

Dwivedi, Praveen; Kranti, Abhinav

doi:10.1109/jsen.2018.2808948

Cited by 68 publications

(47 citation statements)

References 44 publications

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“…no. TFET-based biosensors ON state current sensitivity (S ON ) 1 Lateral DM HTFET (L gap = 20 nm, L Ch = 42 nm, k = 2.1) [ 40 ] 10 2 Single pocket DM TFET ( L gap = 20 nm, L Ch = 42 nm, k = 2.1) [ 40 ] 40 3 SiGe source DM PNPN TFET (L gap = 20 nm, L Ch = 42 nm, k = 2.1) [ 10 ] 4 × 10 3 4 Double gate (DG) TFET (L gap = 30 nm, L gate = 40 nm, k = 12) [ 11 ] 1.05 × 10 2 5 DM NT-TFET (L gap = 50 nm, L gate = 50 nm, k = 10) (V GS = 0.6 V) [ 26 ] ~ 8 × 10 5 6 Ge source DM NT-TFET (L gap = 50 nm, L gate = 50 nm, k = 10) [ 26 ] 6 × 10 5 7 InAs source DM NT-TFET (L gap = 50 nm, L gate = 50 nm, k = 10) [ 26 ] 8 × 10 5 8 Charge plasma based DM NT-TFET (L gap = 10 nm, 50 nm, L gate = 20 nm & 11 nm, k = 8) [ 41 ] ~ 50 9 Diagonal tunneling based DM NT-TFET (L gap = 95 nm, L gate = 50 nm + 45 nm, k = 10) [ 11 ] ~ 10 10 10 Dual channel trench gate biosensor (L gap = 90 nm, L gate ...…”

Section: Resultsmentioning

confidence: 99%

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

2023

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In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. A low (direct) bandgap material, indium arsenide (InAs) has been selectively used in the source region to achieve improved band-to-band tunneling of carriers in the tunnel FET. The extended gate architecture is incorporated to stabilize the biomolecules in the nano-cavity aiding significant boost in ON current sensitivity. Using SILVACO ATLAS TCAD tool, the sensitivity of the biosensor is evaluated considering two important parameters possessed by bio-targets, i.e. dielectric constant ( k ) and charge density ( N ). A thorough analysis has been performed to show the impact of variation of dielectric constants and charge density of biomolecules over transfer characteristics of the device. ON current level (Ion) is eventually extracted which is considered here as the suitable sensing parameter of the device. Transient response to detect the settling time of Ion is also demonstrated here in presence of both positively and negatively charged bio-species with varying values of dielectric constant. Then ON current sensitivity is extracted accordingly for different locations of biomolecules within the nano-gap. Finally, an extensive comparative analysis of the present structure in terms of ON current sensitivity is shown to justify its sensing ability as compared to recently reported device structures.

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Section: Resultsmentioning

confidence: 99%

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

2023

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“…In proposed structure, a cavity is carved in gate dielectric and filled with biomolecules to realize the function of the label free biosensor. Many authors [11], [41], [42] have reported that the size of the biomolecules (protein,biotin,gelatin etc.) lies within 10 nm cavity thickness.…”

Section: Device Structurementioning

confidence: 99%

Label-Free Detection of Biomolecules Using Dielectric-Modulated Top Contact Bi-layer Electrodes Organic Thin Film Transistor

Joshi¹

2022

Preprint

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<p>The dielectric-modulated top contact bi-layer electrodes organic thin-film transistor (DMTCBE-OTFT) based sensor is proposed to reduce the cost and complexity of nanoscale device fabrication for label-free biomolecule detection. In the proposed structure, a cavity is carved in gate dielectric and filled with biomolecules to realise the function of the sensor. The immobilisation of biomolecules in the cavity region alters the performance parameters like on-current (ION), on-off current ratio (ION/IOFF ), and subthreshold swing (SS) of the proposed device. We have also investigated the effects of gate work-function and cavity thickness on the sensitivity of a DMTCBE-OTFT based biosensor. A bi-layer electrodes is also used for a significant reduction in barrier height to enhance the performance of the proposed device. The change in the on-current (ION) and on-off current ratio (ION/IOFF ) has been utilised to evaluate the sensitivity of the DMTCBE-OTFT for biomolecule recognition. It has different dielectric constants and corresponding charge densities using 2-D simulation when biomolecules are immobilised in the cavity area. The ATLAS TCAD tool is used to investigate the sensitivity performance of the DMTCBE-OTFT. The proposed DMTCBEOTFT has almost four times higher drain current sensitivity in comparison to the recently reported OTFT-based biosensors for label-free detection of biomolecules. The DMTCBE-OTFT biosensor has enormous potential for future flexible biosensing applications due to its good sensitivity, flexibility, low cost, and biocompatibility.</p>

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“…The fabrication process flow of SOI-TFETs has been reported by several authors [26,32,33] and the compatibility with the recent CMOS technology is investigated extensively. Thus, the fabrication of the segmented drain SiGe/Si TFET is a real possibility as shown in Fig.…”

Section: Device Modelling and Simulationmentioning

confidence: 99%

“…2. The process initiates with a Silicon On Insulator (SOI) structure [32][33][34]. The N-type drain region can be formed using Difluoroboron (BF 2 ) ion implantation followed by etching for the N + layer deposition (CVD technique).…”

Section: Device Modelling and Simulationmentioning

confidence: 99%

Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity

Dash

Mohanty

Mishra

2021

Silicon

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In this paper, a new Si 0.6 Ge 0.4 /Si heterostructure tunneling field-effect transistor with segmented drain (SiGe/Si SD TFET) is proposed and simulated by Silvaco ATLAS simulator. The drain segmentation increases the tunneling barrier width at the drain/ channel interface and hence reduces ambipolar current (I amb ) considerably. Moreover, the amalgam of Si 0.6 Ge 0.4 source and silicon channel allows much improved On-state current (I on ) with lower Off-state leakage current (I off ). The presence of high bandgap silicon material keeps the lower recombination rate of the carriers in the channel region, thus provides a much higher I on / I off ratio of 5.64 × 10 11 . The segmented drain exhibits more than 4-decades improvement in I amb without affecting I on and I off . The thickness and doping profile of the segmented drain region are calibrated to achieve a higher I on /I amb ratio of 3.29 × 10 9 with an average subthreshold swing (SS) of 42 mV/decade. The investigation is further extended by considering the interface trap charges (ITCs) at the HfO 2 /Si interface for different positive and negative density values.

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Dielectric Modulated Biosensor Architecture: Tunneling or Accumulation Based Transistor?

Cited by 68 publications

References 44 publications

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Label-Free Detection of Biomolecules Using Dielectric-Modulated Top Contact Bi-layer Electrodes Organic Thin Film Transistor

Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity

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