2012
DOI: 10.1007/s10854-012-0990-4
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Dielectric losses and ac conductivity of Si–LiNbO3 heterostructures grown by the RF magnetron sputtering method

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Cited by 18 publications
(10 citation statements)
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“…1 that single-phase h0001i textured polycrystalline LiNbO 3 films are formed on Si (001) substrates during the RFMS process under conditions 1, and the film's texture is a result of the ion-assisted process. This fact is in a good agreement with our previous results [14]. Moreover, Fig.…”
Section: Resultssupporting
confidence: 94%
“…1 that single-phase h0001i textured polycrystalline LiNbO 3 films are formed on Si (001) substrates during the RFMS process under conditions 1, and the film's texture is a result of the ion-assisted process. This fact is in a good agreement with our previous results [14]. Moreover, Fig.…”
Section: Resultssupporting
confidence: 94%
“…Because of its remarkable linear and nonlinear optical properties, chemical and mechanical stability makes lithium niobate (LN) an attractive host material for application in photonic crystal devices [4]. Moreover LN has high electro-optical coefficient and low optical losses thus offers suitability in optical communication systems, which are widely used for applications in microwave telecommunications, memory units, electro optics, modulators, optical switches, waveguides, beam deflectors, second harmonic generation, surface acoustic waves (SAW) devices, parametric optical converters and data transmission [5][6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Optical waveguides comprised of hetero-materials efficiently confine propagating light because of large difference in refractive indices between the film and the substrate [13]. Therefore, LiNbO3s have been grown by several techniques including liquid-phase epitaxy [14], Ion Beam Sputtering [15], RF magnetron sputtering [16], molecular beam epitaxy [17], metalorganic chemical vapor deposition [18], pulsed-laser deposition (PLD) [19], thermal plasma spray chemical vapor deposition [20], electron-cyclotron-resonance (ECR) plasma sputtering [21], electron beam irradiation [22] and pulsed laser ablation (PLA) [23].…”
Section: Introductionmentioning
confidence: 99%
“…Analysis of the X-ray diffraction results for LN2-T sample demonstrates (see Fig. 6) that TA of Si-LiNbO 3 heterostructures triggers recrystallization of the films with an increase of the average grain size up to 1.5 times (about 70 nm) and weakens of the texture compared with as-grown films [13,17]. It is important to emphasize, that TA of the as grown LiNbO 3 films leads to the formation of LiNb 3 O 8 phase.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, TA induces increasing the porosity of film surface [10] along with decreasing the film transmittance. At the same time, TA brings about a surface transformation processes like raise in the surface roughness, weakening the film texture [13] as well as formation of the surface layers influencing the ferroelectric properties of treated heterostructures. Also, TA improves a O/Nb ratio in the as-grown LiNbO 3 films [14].…”
Section: Introductionmentioning
confidence: 99%