Dielectric Interface Effects on Surface Charge Accumulation and Collection towards High-Efficiency Organic Solar Cells

Hsiao, Yu-Che; Zang, Huidong; Ivanov, Ilia N.; Xu, Tao; Lu, Luyao; Yu, Luping; Hu, Bin

doi:10.1063/1.4871466

Cited by 20 publications

(17 citation statements)

References 42 publications

(48 reference statements)

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“…[33] The V peak value can effectively reflect the interfacial barrier, determined by charge injection barrier and charge accumulation. [34] Under illumination, the PPD without ZnO interfacial layer has one V peak in positive voltage, which is consistent with V oc in the J-V curve (Figure 1d). For the PPDs with ZnO interfacial layer, the C-V curve has two peaks on both sides of the "zero" voltage, indicating a two-way charge injection.…”

Section: R ¼ Eqe ãQ=hυsupporting

confidence: 80%

High‐Performance Polymer Photodetectors using ZnO Nanocrystal Trap States

Zhou

Yan

Deng

et al. 2021

Physica Rapid Research Ltrs

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Section: R ¼ Eqe ãQ=hυsupporting

confidence: 80%

High‐Performance Polymer Photodetectors using ZnO Nanocrystal Trap States

Zhou

Yan

Deng

et al. 2021

Physica Rapid Research Ltrs

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“…A number of studies have shown improved photovoltaic performance when a thin layer of ferroelectric layer with oriented dipoles is situated at one of the charge extraction contacts of the solar cell (Liu et al, 2013,Rastogi, 2013,Shin et al, 2014,Lazarev et al, 2015,Mai et al, 2015. The modification of surface charge can be established by capacitance spectroscopy (Hsiao et al, 2014). (Asadi et al, 2011) suggested that that the improved efficiency is due to improvement of the cathode.…”

Section: Energy Barrier At Interfacesmentioning

confidence: 99%

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

et al. 2016

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“…Clearly, using the NiOx HTL can decrease the non-radiative recombination by reducing the interfacial traps, consequently increasing the Jsc in perovskite solar cells. We also note that a high-dielectric layer can facilitate the de-trapping of trapped carriers in organic solar cells due to interfaceinduced polarization [46], decreasing the effective density of interfacial traps. Here, the high dielectric constant may be partially responsible for the reduced interfacial trapping events in the NiOx based device.…”

Section: Effects Of Niox Htl On Non-radiative Recombinationmentioning

confidence: 90%

Simultaneously enhancing dissociation and suppressing recombination in perovskite solar cells

Lin

Ahmadi

et al. 2017

Nano Energy

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This article reports the experimental studies on simultaneously enhancing the dissociation and suppressing the recombination in perovskite solar cells by using high-dielectric Nickel Oxide (NiOx) as hole transport layer. Specifically, the magneto-photocurrent, generated by the electron-hole pairs, surprisingly becomes negligible at short-circuit condition when the NiOx is used to replace the poly (3,4-ethylenedioxythiophene) poly (styrene-sulfonate) (PEDOT:PSS). This indicates that the NiOx transport layer leads to a complete dissociation of electron-hole pairs in perovskite layer. On the other hand, the negligible magnetophotocurrent can be recovered to become appreciable when a forward bias is applied towards open-circuit condition to weaken the built-in field. This magneto-photocurrent result suggests that the NiOx transport layer enhances the built-in field, completely dissociating the electronhole pairs. Furthermore, the photoinduced capacitance studies confirm that the built-in field is enhanced essentially through static and dynamic parameters, by removing the interfacial traps and decreasing the accumulation of photogenerated carriers. The time-resolved photoluminescence shows that the NiOx/CH 3 NH 3 PbI 3 interface leads to a reduction on nonradiative recombination, increasing the fraction of useful excitons available for photovoltaic actions. Moreover, the field-dependent photoluminescence measured alternatively at shortcircuit and open-circuit conditions shows that the NiOx layer can also suppress the radiative recombination within available excitons, boosting the photovoltaic actions. Therefore, our studies reveal that the high-dielectric NiOx transport layer can simultaneously enhance the dissociation of electron-hole pairs and suppress both non-radiative/radiative recombination, leading to the more efficient generation of Jsc and Voc in perovskite solar cells.

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Dielectric Interface Effects on Surface Charge Accumulation and Collection towards High-Efficiency Organic Solar Cells

Abstract: Articles you may be interested inEffect of doping on the short-circuit current and open-circuit voltage of polymer solar cells

Cited by 20 publications

References 42 publications

High‐Performance Polymer Photodetectors using ZnO Nanocrystal Trap States

High‐Performance Polymer Photodetectors using ZnO Nanocrystal Trap States

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

Simultaneously enhancing dissociation and suppressing recombination in perovskite solar cells

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