2022
DOI: 10.1007/s00339-022-05279-5
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Dielectric, ferroelectric, magnetic and electrical properties of Sm-doped GaFeO3

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Cited by 5 publications
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“…Because of the bulk resistance, one can detect a shift in the peak location towards higher frequencies as the molar concentration increases. whereas an increase in molar concentration is responsible for a lower peak height as a result of accumulating space charge carriers at low frequencies [ 73 , 74 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%
“…Because of the bulk resistance, one can detect a shift in the peak location towards higher frequencies as the molar concentration increases. whereas an increase in molar concentration is responsible for a lower peak height as a result of accumulating space charge carriers at low frequencies [ 73 , 74 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%